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TCR3DM15,LF(S

Description
LDO Voltage Regulators CMOS point regulator 300mA, output: 1.5V
Categorysemiconductor    Power management   
File Size504KB,15 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TCR3DM15,LF(S Overview

LDO Voltage Regulators CMOS point regulator 300mA, output: 1.5V

TCR3DM15,LF(S Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryLDO Voltage Regulators
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseDFN-4
Output Voltage1.5 V
Output Current300 mA
Number of Outputs1 Output
Quiescent Current125 uA
Input Voltage MAX5.5 V
Input Voltage MIN1.75 V
Output TypeFixed
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 85 C
Load Regulation35 mV
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductLDO Regulators
TypeCMOS Linear Voltage Regulator
Dropout Voltage - Max210 mV
PSRR / Ripple Rejection - Typ70 dB
Voltage Regulation Accuracy1 %
Line Regulation15 mV
Pd - Power Dissipation420 mW
Factory Pack Quantity3000
TCR3DM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR3DM series
300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit
The TCR3DM series are CMOS general-purpose single-output
voltage regulators with an on/off control input, featuring low dropout
voltage, low output noise voltage and low inrush current.
These voltage regulators are available in fixed output voltages
between 1.0 V and 4.5 V and capable of driving up to 300 mA.
They feature over-current protection, over-temperature protection,
Inrush current protection circuit and Auto-discharge function.
The TCR3DM series are offered in the ultra small plastic mold
package DFN4 (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout
voltage of 210 mV (2.5 V output, I
OUT
= 300 mA) with low output
BOTTOM VIEW ILLUSTRATION
noise voltage of 38
μV
rms
(2.5 V output) and a load transient
DFN4
response of only
⊿V
OUT
=
±80
mV ( I
OUT
= 1 mA⇔300 mA, C
OUT
Weight : 1.3 mg ( typ.)
=1.0
μF).
As small ceramic input and output capacitors can be used with the
TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as
cellular phones.
Features
Low Drop-Out voltage
V
IN
-V
OUT
= 210 mV (typ.) at 2.5 V-output, I
OUT
= 300 mA
V
IN
-V
OUT
= 270 mV (typ.) at 1.8 V-output, I
OUT
= 300 mA
V
IN
-V
OUT
= 490 mV (typ.) at 1.2 V-output, I
OUT
= 300 mA
Low output noise voltage
V
NO
= 38
μV
rms
(typ.) at 2.5 V-output, I
OUT
= 10 mA, 10 Hz
f
100 kHz
Fast load transient response (⊿V
OUT
= ±80 mV (typ.) at I
OUT
= 1 mA⇔ 300 mA, C
OUT
=1.0
μF
)
High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, I
OUT
= 10 mA, f =1kHz )
Over-current protection
Over-temperature protection
Inrush current protection circuit
Auto-discharge function
Pull down connection between CONTROL and GND
Ceramic capacitors can be used ( C
IN
= 1.0μF, C
OUT
=1.0
μF
)
Ultra small package DFN4 (1.0 mm x 1.0 mm ; t 0.58 mm )
Start of commercial production
2013-03
1
2015-08-31

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