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BCW68GTA

Description
Bipolar Transistors - BJT
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerDiodes Incorporated
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Bipolar Transistors - BJT

BCW68GTA Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
GuidelineCECC50002-234
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS –
BCW67A – DA
BCW67B – DB
BCW67C – DC
BCW68F – DF
BCW68G – DG
BCW68H – DH
COMPLEMENTARY TYPES –
BCW67 – BCW65
BCW68 – BCW66
BCW67AR –
BCW67BR –
BCW67CR –
BCW68FR –
BCW68GR –
BCW68HR –
4W
5W
6W
7T
5T
7N
BCW67
BCW68
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
BCW67
-45
-32
-5
-1000
-800
-100
330
-55 to +150
BCW68
-60
-45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 29

BCW68GTA Related Products

BCW68GTA
Description Bipolar Transistors - BJT
Maker Diodes Incorporated
Parts packaging code SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3
Contacts 3
Reach Compliance Code compliant
ECCN code EAR99
Maximum collector current (IC) 0.8 A
Collector-emitter maximum voltage 45 V
Configuration SINGLE
Minimum DC current gain (hFE) 120
JESD-30 code R-PDSO-G3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type PNP
Certification status Not Qualified
Guideline CECC50002-234
surface mount YES
Terminal form GULL WING
Terminal location DUAL
Transistor component materials SILICON
Nominal transition frequency (fT) 100 MHz
Maximum off time (toff) 400 ns
Maximum opening time (tons) 100 ns
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