ZXMN2A01E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(ON)
120m @ V
GS
= 4.5V
Max I
D
T
A
= +25C
(Note 6)
3.1A
Features and Benefits
Low On-resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
20V
Description and Applications
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
DC - DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.016 grams (Approximate)
D
SOT26
D
1
D
2
G
3
6
5
4
D
D
S
G
S
Top View
Pin-Out (Top View)
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN2A01E6TA
ZXMN2A01E6TC
Notes:
Marking
2A1
2A1
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2A1
2A1 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
2017
E
Apr
4
May
5
YM
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
ZXMN2A01E6
Datasheet Number: DS33512 Rev. 4 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN2A01E6
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
T
A
= +25C (Note 6)
T
A
= +70C (Note 6)
T
A
= +25C (Note 5)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
Value
20
12
3.1
2.5
2.5
11
2.4
11
Unit
V
V
A
A
A
A
NEW PRODUCT
Pulsed Drain Current
(
Note 7)
Continuous Source Current (Body Diode)
(
Note 6)
Pulsed Source Current (Body Diode)
(
Note 7)
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation at T
A
= +25C (Note 5)
Linear derating factor
Power Dissipation at T
A
= +25C (Note 6)
Linear Derating Factor
Junction to Ambient (Note 5)
Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
R
JA
R
JA
T
J
, T
STG
Value
1.1
8.8
1.7
13.6
113
70
-55 to +150
Unit
W
mW/C
W
mW/C
C/W
C/W
C
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t≦10 secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10µs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (Note 8)
Forward Transconductance (Notes 8 &10)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 10)
Output Capacitance (Note 10)
Reverse Transfer Capacitance (Note 10)
Total Gate Charge (Notes 9 & 10)
Gate-Source Charge (Notes 9 & 10)
Gate-Drain Charge (Notes 9 & 10)
Turn-On Delay Time (Notes 9 & 10)
Turn-On Rise Time (Notes 9 & 10)
Turn-Off Delay Time (Notes 9 & 10)
Turn-Off Fall Time (Notes 9 & 10)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
Notes:
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
20
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
6.1
0.9
303
59
30
3.0
0.8
Max
-
1
100
-
0.120
0.225
-
0.95
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
A
nA
V
Ω
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
I
D
= 250A, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
V
GS
=
12V,
V
DS
= 0V
I
D
= 250A, V
DS
= V
GS
V
GS
= 4.5V, I
D
=4A
V
GS
= 2.5V, I
D
=1.5A
V
DS
= 10V, I
D
=4A
T
J
= +25°
, I
S
= 3.2A, V
GS
= 0V
C
V
DS
= 15V, V
GS
= 0V
f = 1MHz
V
GS
= 4.5V, V
DS
= 10V
I
D
= 4A
1.0
2.49
5.21
7.47
4.62
23
5.65
V
DD
= 10V, V
GS
= 5V
I
D
= 4A, R
G
= 6.0
T
J
= +25° I
F
=4A,
C,
di/dt= 100A/μs
8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN2A01E6
Datasheet Number: DS33512 Rev. 4 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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