A Product Line of
Diodes Incorporated
DMN3730UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
30V
R
DS(on)
460m @ V
GS
= 4.5V
560m @ V
GS
= 2.5V
I
D
T
A
= +25°C
0.9A
0.7A
Features and Benefits
0.4mm Ultra Low Profile Package for Thin Application
0.6mm
2
Package Footprint, 10 times Smaller than SOT23
Low V
GS(th),
can be driven directly from a battery
Low R
DS(on)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
Applications
Load Switch
Portable Applications
Power Management Functions
Drain
X2-DFN1006-3
S
D
G
ESD PROTECTED TO 2kV
Gate
Body
Diode
Bottom View
Top View
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN3730UFB4-7
DMN3730UFB4-7B
Notes:
Marking
NF
NF
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN3730UFB4
Document number: DS35017 Rev. 8 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3730UFB4
Marking Information
NF
Top View
Dot Denotes Drain Side
From date code 1527 (YYWW),
this changes to:
NF
Top View
Bar Denotes Gate and Source Side
DMN3730UFB4-7
NF
NF
NF
Top View
Bar Denotes Gate and Source Side
NF = Part Marking Code
DMN3730UFB4-7B
NF
NF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
Continuous Drain Current
Pulsed Drain Current
V
GS
= 4.5V T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
I
DM
Symbol
V
DSS
V
GSS
I
D
Value
30
±8
0.91
0.73
0.75
3
A
Unit
V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
NF
Symbol
(Note 6)
(Note 5)
(Note 6)
(Note 5)
P
D
R
θJA
T
J
,
T
STG
Value
0.69
0.47
180
258
-55 to +150
NF
NF
5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
6. Same as note 4, except the device measured at t
10 seconds.
7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10µs.
NF
DMN3730UFB4
Document number: DS35017 Rev. 8 - 2
2 of 7
www.diodes.com
NF
Unit
W
°C/W
°C
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3730UFB4
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
—
—
0.45
—
—
—
40
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
0.7
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
Max
—
1
3
0.95
460
560
730
—
1.2
—
—
—
—
—
—
—
—
—
—
—
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
mΩ
Unit
V
µA
µA
V
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 100mA
V
GS
= 1.8V, I
D
= 75mA
V
DS
= 3V, I
D
= 10mA
V
GS
= 0V, I
S
= 300mA
8. Measured under pulsed conditions to minimize self-heating effect. Pulse width
300µs; duty cycle
2%
9. For design aid only, not subject to production testing.
2.0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.0V
2.0
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 2.0V
V
GS
= 1.5V
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 2.5V
1.5
1.0
1.0
0.5
0.5
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
DMN3730UFB4
Document number: DS35017 Rev. 8 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3730UFB4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.8
0.8
V
GS
= 4.5V
0.6
0.6
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
V
GS
= 1.8V
0.4
V
GS
= 2.5V
V
GS
= 4.5V
0.4
T
A
= 25°C
0.2
0.2
T
A
= -55°C
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
0
0
0.25
0.5
0.75
1
1.25
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.5
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= 4.5V
I
D
= 1.0A
1.4
V
GS
= 2.5V
I
D
= 500mA
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.8
0.6
1.2
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
V
GS
= 4.5V
I
D
= 1.0A
0.2
0.8
0.6
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.0
1.0
I
S
, SOURCE CURRENT (A)
1.6
T
A
= 25°C
0.8
I
D
= 1mA
1.2
0.6
I
D
= 250µA
0.8
0.4
0.2
0.4
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
DMN3730UFB4
Document number: DS35017 Rev. 8 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3730UFB4
100
C
iss
10,000
I
DSS
, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
1,000
T
A
= 150°C
T
A
= 125°C
10
C
rss
C
oss
100
T
A
= 85°C
10
T
A
= 25°C
f = 1MHz
1
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
1
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
30
8
V
GS
, GATE-SOURCE VOLTAGE (V)
6
V
DS
= 15V
I
D
= 1A
4
2
0
0
0.5
1
1.5
2
2.5
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
1
3
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
JA
(t) = r(t) * R
JA
R
JA
= 253°C/W
P(pk)
D = 0.02
0.01
D = 0.01
t
1
D = 0.005
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
DMN3730UFB4
Document number: DS35017 Rev. 8 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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