EEWORLDEEWORLDEEWORLD

Part Number

Search

2N5770

Description
Bipolar Transistors - BJT NPN 15V 50mA HFE/2
CategoryDiscrete semiconductor    The transistor   
File Size295KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2N5770 Online Shopping

Suppliers Part Number Price MOQ In stock  
2N5770 - - View Buy Now

2N5770 Overview

Bipolar Transistors - BJT NPN 15V 50mA HFE/2

2N5770 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.1 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.7 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)900 MHz
Base Number Matches1
2N5770
Discrete POWER & Signal
Technologies
2N5770
C
BE
TO-92
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
30
4.5
50
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N5770
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

2N5770 Related Products

2N5770 2N5770_D26Z 2N5770_Q
Description Bipolar Transistors - BJT NPN 15V 50mA HFE/2 Bipolar Transistors - BJT NPN RF Transistor Bipolar Transistors - BJT NPN 15V 50mA HFE/2
Configuration SINGLE Single Single
Packaging - Reel Bulk
Product Attribute - Attribute Value Attribute Value
Manufacturer - ON Semiconductor ON Semiconductor
Product Category - Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - Details N
Mounting Style - Through Hole Through Hole
Package / Case - TO-92-3 Kinked Lead TO-92-3
Transistor Polarity - NPN NPN
Collector- Emitter Voltage VCEO Max - 15 V 15 V
Collector- Base Voltage VCBO - 30 V 30 V
Emitter- Base Voltage VEBO - 4.5 V 4.5 V
Maximum DC Collector Current - 0.05 A 0.05 A
Minimum Operating Temperature - - 55 C - 55 C
Maximum Operating Temperature - + 150 C + 150 C
Height - 5.33 mm 5.33 mm
Length - 5.2 mm 5.2 mm
Width - 4.19 mm 4.19 mm
DC Collector/Base Gain hfe Min - 20 20
Pd - Power Dissipation - 350 mW 350 mW
Unit Weight - 0.008466 oz 0.008466 oz
Design of a Frequency Shift Keying Wireless Modem
introductionAs an important component of wireless measurement and control systems, wireless modems need to have the characteristics of high speed, high reliability, and small package size. Some existi...
Aguilera RF/Wirelessly
Two ADCs collect two signal sources. If one of them is not commented out in the program, the two sets of detected signals will always...
[i=s] This post was last edited by YZW977 on 2018-4-19 11:51[/i] The following is the ADC initialization and conversion program u16 ADCResult(u8 ch) { u16 Result; P1ASF = 0x80; //Set P17 The bit is th...
YZW977 51mcu
Find the main functions that ep2c8q208c8 can accomplish
I'm new to FPGA and I'm still illiterate. Please help me....
一路为将来 FPGA/CPLD
Xintang arm9-ejs development board 200 yuan
The W90P950 development board adopts a one-board design, a 6-layer PCB structure, and a size of only 80×90mm, which is convenient for customers to carry, debug and measure. The design strictly follows...
osoon2008 Buy&Sell
Using SDFlash to burn F28016 prompts that it cannot connect
[i=s]This post was last edited by woodenbox on 2013-12-25 17:23[/i] RT, I have set up everything according to the online tutorial, but when burning, it prompts "Failed connection to the target". There...
woodenbox Microcontroller MCU
FAQ: How to design an efficient and reliable USB PD power supply in minutes - PI Expert step-by-step tutorial
Live Topic : How to Complete Efficient and Reliable USB PD Power Design in Minutes—PI Expert Step-by-Step Tutorialbrief introduction: The design of USB PD charger/power supply faces some challenges du...
EEWORLD社区 Power technology

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2327  1013  1754  1368  212  47  21  36  28  5 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号