ZTX968 datasheet, PDF - EEWORLD Datasheet

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ZTX968: DescriptionBipolar Transistors - BJT PNP Big Chip SELine; CategoryDiscrete semiconductor The transistor; File Size119KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX968 Overview

Bipolar Transistors - BJT PNP Big Chip SELine

ZTX968 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum collector current (IC)	4.5 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-XSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 2 JUNE 94

FEATURES

* 4.5 Amps continuous current

* Up to 20 Amps peak current

* Very low saturation voltage

* High gain

* Spice model available

ZTX968

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

-15

-12

-6

-20

-4.5

1.58

1.2

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

°C

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

-50

-100

-220

-930

-830

MIN.

-15

-12

-6

TYP.

-28

-20

-8

-50

-1

-10

-100

-150

-300

-1050

-1000

MAX.

UNIT

V

nA

mV

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-12V

V

CB

=-12V, T

amb

=100°C

V

EB

=-6V

I

C

=-500mA, I

B

=-5mA*

I

C

=-2A, I

B

=-50mA*

I

C

=-5A, I

B

=-200mA*

I

C

=-5A, I

B

=-200mA*

IC=-5A, V

CE

=-1V*

µ

A

V

BE(sat)

V

BE(on)

3-333

ZTX968 Related Products

	ZTX968	ZTX968STZ
Description	Bipolar Transistors - BJT PNP Big Chip SELine	Bipolar Transistors - BJT PNP Big Chip SELine
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to
Parts packaging code	TO-92	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	4.5 A	4.5 A
Collector-emitter maximum voltage	12 V	12 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	150	150
JESD-30 code	R-XSIP-T3	R-PSIP-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Package body material	UNSPECIFIED	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	85 MHz
Base Number Matches	1	1

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