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BFR30LT1G

Description
RF JFET Transistors 25V 10mA
CategoryDiscrete semiconductor    The transistor   
File Size60KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BFR30LT1G Overview

RF JFET Transistors 25V 10mA

BFR30LT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionLEAD FREE, CASE 318-08, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)1.5 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BFR30LT1, BFR31LT1
JFET Amplifiers
N−Channel
Features
Pb−Free Package is Available
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
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MAXIMUM RATINGS
Rating
Symbol
V
DS
Value
25
25
Unit
Vdc
Vdc
Drain −Source Voltage
Gate −Source Voltage
V
GS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
3
1
2
THERMAL CHARACTERISTICS
Characteristic
SOT−23
CASE 318
STYLE 10
1
x
M
MxM
Symbol
P
D
Max
225
1.8
556
Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
mW
mW/°C
°C/W
= 1 or 2
= Date Code
R
qJA
P
D
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
ORDERING INFORMATION
Device
BFR30LT1
BFR30LT1G
BFR31LT1
BFR31LT1G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
300
2.4
417
mW
mW/°C
°C/W
°C
R
qJA
Junction and Storage Temperature
T
J
, T
stg
−55 to +150
1. Device mounted on FR4 glass epoxy printed circuit board using the
recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. 4
Publication Order Number:
BFR30LT1/D

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