NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 FEBRUARY 95
FEATURES
* B
CEV
=150V
* Very Low Saturation Voltage
* High Gain
* Inherently Low Noise
APPLICATIONS
* Emergency Lighting
* Low Noise Audio
ZTX1051A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
150
40
5
10
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
ZTX1051A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
MIN.
150
150
40
150
5
TYP.
190
190
60
190
8.8
0.3
0.3
0.3
17
75
165
920
825
290
300
190
45
440
450
310
70
155
27
100
300
40
10
10
10
25
110
210
1000
950
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=100µA
IC=100µA
IC=10mA
IC=100µA, V
EB
=1V
I
E
=100µA
V
CB
=120V
V
EB
=4V
VCES=120V
I
C
=0.2A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=4A, I
B
=100mA*
I
C
=4A, I
B
=100mA*
IC=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
Collector-Emitter Saturation V
CE(sat)
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
1200
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZTX1051A
180
1.0
D=1(D.C)
t1
160
140
Max Power Dissipation - (Watts)
120
100
tp
D=t1
tp
0.75
Am
t
en
bi
D=0.5
m
te
0.50
80
ra
pe
D=0.2
60
D=0.1
D=0.05
re
tu
40
0.25
20
Single Pulse
0
0.1ms
1ms
10ms
100ms
1s
10s
100s
-40
0
40
80
120
160
200
Pulse Width
T -Temperature
(°C)
Transient Thermal Resistance
SPICE PARAMETERS
*ZETEX ZTX1051A Spice model Last revision 16/12/94
Derating curve
*
.MODEL ZTX1051A NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
+
+
+
+
*
ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010
CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
©
1995 ZETEX PLC
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
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