PD- 95334
SMPS MOSFET
Applications
l
High Frequency Synchronous Buck
Converters for Computers and
Communications
l
Lead-Free
IRF7477PbF
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max (mW)
8.5@V
GS
= 10V
10@V
GS
= 4.5V
I
D
14A
11A
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
l
Low Charge Ratio to Eliminate False Turn
On in High Frequency Circuits
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
09/21/04
IRF7477PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.5
7.7
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
8.5
V
GS
= 10V, I
D
= 14A
mΩ
10
V
GS
= 4.5V, I
D
= 11A
2.5
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 24V, V
GS
= 0V
µA
100
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
25
6.5
8.2
30
12
9.8
19
5.9
2710
1120
100
Max. Units
Conditions
–––
S
V
DS
= 15V, I
D
= 11A
38
I
D
= 11A
–––
nC
V
DS
= 15V
–––
V
GS
= 4.5V
–––
V
GS
= 0V, V
DS
= 15V
–––
V
DD
= 15V
–––
I
D
= 11A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
500
8.2
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
2.3
A
110
1.3
–––
140
200
140
210
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.80
––– 0.65
––– 91
––– 130
––– 90
––– 140
2
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 125°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
R
=15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 11A, V
R
=15V
di/dt = 100A/µs
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IRF7477PbF
1000
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
100
2.7V
2.7V
10
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 14A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 25
°
C
T
J
= 150
°
C
100
1.0
0.5
10
2.5
V DS = 50V
20µs PULSE WIDTH
3.0
3.5
4.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7477PbF
100000
12
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
11A
10
V
DS
= 24V
V
DS
= 15V
10000
C, Capacitance(pF)
8
Ciss
1000
Coss
6
Crss
100
4
2
10
1
10
100
0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 150
°
C
10
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
T
J
= 25
°
C
1
10msec
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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Fig 6.
On-Resistance Vs. Drain Current
IRF7477PbF
15
V
DS
12
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
-
V
DD
9
10V
6
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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