EEWORLDEEWORLDEEWORLD

Part Number

Search

BSZ088N03LSGATMA1

Description
MOSFET LV POWER MOS
CategoryDiscrete semiconductor    The transistor   
File Size617KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSZ088N03LSGATMA1 Online Shopping

Suppliers Part Number Price MOQ In stock  
BSZ088N03LSGATMA1 - - View Buy Now

BSZ088N03LSGATMA1 Overview

MOSFET LV POWER MOS

BSZ088N03LSGATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionROHS COMPLIANT, PLASTIC, TSDSON-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)25 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.013 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
 % *   !   % 
"%&$!"#E
# ;B 1= " %   &

6MI[\YMZ
Q 2 C C 49:? 8 ' ) -  . 7 - ' * -
D G:D
@B
Q ) AD :J65 D
:>
649? @= 7     4@? F6B 6B
@8I @B
D C
Q + E =:65 2 44@B 8 D $    
2 :7
5:? @
Q( 492 ? ? 6=& @8:4 =

6F6=
Q H = D82 D 492 B H
'
9I"\[#
AB 4D ) ' 
46=
6?
6
86
@5E
Q/ 6B = @? B :C2 ? 46
'
9I"\[#
I @G
6C D
Q - E :@B D > 2 = 6C D ? 46
A6B 96B
B :C2
Q  F2 =? 496 B D
2
2 65
Q * 3 766 A=D 8 , @" - 4@> A= ? D
B
2 :?
:2
Q" 2 =
@86? 766 2 44@B 8 D #       
B
5:? @
B`XM
 - 1

  (

 & - !

?IKSIOM
F=%JI9IED%0
<IYSQVO
(00D(+B
)#
#=
;0@/?% @9 9 -=
D
)
9I
'
9I"\[#$ZNd
$
9
+(
0&0
,(
F=%JI9IED%0
K
Z"
6
7 D B 2 AA= D C
@B 2 86D
:42 :@?
-C5 @9 = 5 3>
2 D
(
W
   T  E = C@D G:C C
9
-?: 
? 6C 96B 6 A64:7
:65
?IYIUM[MY
 @? D E C5B :? 4E B D
:? @E 2
B 6?
A`UJWT 3WVLQ[QWVZ
$
9
)
=I


/ 

(
8
   T
)
=I


/ 

(
8


T

)
=I
   / 
(
8
   T
)
=I
   / 
(
8


T

)
=I


/ 

(
6
   T 
'
`U@6
 

% 0

* EC 5B :? 4E B D
=65 2
B 6?
+#
 F2 =? 496 4E B D C 8= AEC
,#
2
B 6?  :? 6 =6
 F2 =? 496 6? 6B C 8= AEC
2
8I :? 6 =6
$
9$]aY_R
$
6I
#
6I
(
8
   T
(
8
   T
$
9
 

 

'
=I
  
"
$
9
 

 

)
9I
   / 
Q- 'Q.
 

 V C


(
W$ZNd
 

T

*#
DIT\M
,(
+*
,(
*.
CVQ[
6
)*
).(
*(
*-
Z@
, 6F6B 6 5:@56 5/
'Q.
C
Q/ 'Q.
.
XK'r_
!2 D C B F@= 86
6 @E 46 D
2
)#
)
=I
q*(
K
$ - . 

2 ? 5 $  -   

, 6F 

A2 86


 

BSZ088N03LSGATMA1 Related Products

BSZ088N03LSGATMA1 BSZ088N03LS G
Description MOSFET LV POWER MOS mosfet optimos 3 N-CH 30v 40a 8.8mohms

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 200  1816  2483  958  646  5  37  50  20  13 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号