November 15, 2010
IRS2509SPbF
HALF-BRIDGE DRIVER
Features
600V half-bridge driver
Tolerant to negative transient voltages
Gate drive supply range from 10 V to 20 V
Under-voltage lock-out for both channels
3.3 V, 5 V and 15 V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Internal 530 ns dead-time
Lower di/dt gate driver for better noise immunity
Shut down input turns off both channels
RoHS compliant
Packages
8-Lead SOIC
Product Summary
V
OFFSET
I
O+/-
V
OUT
t
on/off
(typ.)
Dead Time
600 V max.
120 mA / 250 mA
10 V – 20 V
750 ns & 200 ns
530 ns
Description
The IRS2509 is a high-voltage, high-speed power MOSFET
and IGBT half-bridge driver with independent high and low
side referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable a ruggedized monolithic
construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3 V. The output drivers
feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600V.
Applications:
*HID Electronic Ballasts
Typical Connection
IRS2509SPbF
Qualification Information
Qualification Level
†
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Industrial
††
(per JEDEC JESD 47)
Comments: This IC has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted
by extension of the higher Industrial level.
†††
MSL2
SOIC-8N
(per IPC/JEDEC J-STD-020)
Class B (+/-200V)
(per JEDEC standard JESD22-A115)
Class 1C (+/-1000V)
(per EIA/JEDEC standard EIA/JESD22-A114)
Class I, Level A
(per JESD78A)
Yes
IC Latch-Up Test
RoHS Compliant
†
††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
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2
IRS2509SPbF
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
COM
dV
S
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN & SD)
Logic ground
Allowable offset supply voltage transient
Package power dissipation @ TA
≤
+25 °C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
V
B
- 20
V
S
- 0.3
-0.3
-0.3
COM -0.3
V
CC
- 20
—
—
—
—
-50
—
Max.
620
V
B
+ 0.3
V
B
+ 0.3
20
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
0.625
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The V
S
and COM offset rating
are tested with all supplies biased at 15 V differential.
Symbol
V
B
V
S
V
St
V
HO
V
CC
V
LO
V
IN
Definition
High side floating supply absolute voltage
Static High side floating supply offset voltage
Transient High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN & SD)
Min.
V
S
+10
COM- 8(Note 1)
-50 (Note2)
V
S
10
0
Max.
V
S
+20
600
600
V
B
20
V
CC
Units
V
V
SS
V
CC
T
A
Ambient temperature
-40
125
°C
Note 1:
Logic operational for V
S
of -8 V to +600 V. Logic state held for V
S
of -8 V to – V
BS.
Note 2:
Operational for transient negative VS of COM - 50 V with a 50 ns pulse width. Guaranteed by design. Refer
to the Application Information section of this datasheet for more details.
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3
IRS2509SPbF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, COM = V
CC
, C
L
= 1000 pF, T
A
= 25 °C, DT = V
SS
unless otherwise specified.
Symbol
t
on
t
off
t
sd
MT
t
r
t
Definition
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DT
LO-HO)
HO turn-off to LO turn-on (DT
HO-LO)
Delay matching time (t
ON
, t
OFF
)
Deadtime matching = DT
LO-HO
- DT
HO-LO
&
Min Typ Max Units Test Conditions
—
—
—
—
—
—
350
—
—
750
250
250
—
150
50
530
—
—
1100
400
400
60
220
80
800
60
60
ns
V
S
= 0 V
V
S
= 0 V
V
IN
= 0 V & 5 V
Without external
deadtime
V
S
= 0 V or 600 V
V
S
= 0 V or 600 V
f
DT
MT
MDT
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15 V, V
CC
= COM, DT = V
CC
and T
A
= 25 °C unless otherwise specified. The V
IL,
V
IH
and I
IN
parameters are referenced to V
CC
/COM and are applicable to the respective input leads: IN and SD. The V
O,
I
O
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
SD, TH+
I
SD, TH-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
logic “1” input voltage for HO & logic “0” for LO
logic “0” input voltage for HO & logic “1” for LO
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
SD input positive going threshold
SD input negative going threshold
V
CC
and V
BS
supply undervoltage positive going
Threshold
V
CC
and V
BS
supply undervoltage negative going
Threshold
Hysteresis
Output high short circuit pulsed current
Output low short circuit pulsed current
Min Typ Max Units Test Conditions
2.2
—
—
—
—
—
—
—
0.8
0.3
—
45
—
0.8
1.4
0.6
50
70
µA
V
I
O
= 20 mA
I
O
= 20 mA
V
B
= V
S
= 600 V
V
IN
= 0 V or 4 V
V
IN
= 0 V or 4 V
V
IN
= 4 V
V
IN
= 0 V
1000 2000 3000
—
—
—
—
8.0
7.4
—
120
250
5
—
15
10
8.9
8.2
0.7
200
350
20
2
30
20
9.8
9.0
—
—
V
mA
—
V
O
= 0 V,
PW
≤
10 us
V
O
= 15 V,
PW
≤
10 us
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4
IRS2509SPbF
Functional Block Diagrams
Lead Definitions
Symbol
IN
SD
V
B
HO
V
S
V
CC
LO
COM
Description
Logic input for high and low side gate driver outputs (HO and LO), in phase
Logic input for shutdown
High side floating supply
High side gate drive output
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
Low side return
Lead Assignments
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5
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