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BC847AT-TP

Description
Bipolar Transistors - BJT 100mA 45V
CategoryDiscrete semiconductor    The transistor   
File Size227KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BC847AT-TP Overview

Bipolar Transistors - BJT 100mA 45V

BC847AT-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC847AT, BT, CT
Features
Halogen
free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epitaxial Die Construction
Complementary PNP Type Available (BC857AT,BT,CT)
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
NPN
Surface Mount Small
Signal Transistor
150mW
SOT-523
A
D
Maximum Data
Case: SOT-523
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking:BC847AT--1E,BC847BT--1F,BC847CT-1G.
C
B
C
Maximum Ratings @ 25
Symbol
Unless Otherwise Specified
Value
Units
E
B
E
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
P
d
R
JA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to
Ambient(Note 1)
Operating & Storage Temperature
45
50
6.0
100
150
833
-55~+150
Vdc
G
H
J
Vdc
Vdc
mAdc
mW
/W
DIM
A
B
C
D
E
G
H
J
K
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
NOTE
K
DIMENSIONS
T
J
, T
STG
Note: 1. Device mounted on FR-4 PCB with recommended pad
layout
www.mccsemi.com
Revision:
B
1
of
3
2013/01/01

BC847AT-TP Related Products

BC847AT-TP BC847BT-TP BC847CT-TP
Description Bipolar Transistors - BJT 100mA 45V Bipolar Transistors - BJT 100mA 45V Bipolar Transistors - BJT 100mA 45V
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC)
package instruction ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 200 420
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz

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