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IRFR5410PBF

Description
MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC
CategoryDiscrete semiconductor    The transistor   
File Size266KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFR5410PBF Overview

MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC

IRFR5410PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)194 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)13 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.205 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)66 W
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD -95314A
l
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR5410)
Straight Lead (IRFU5410)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
D
IRFR5410PbF
IRFU5410PbF
V
DSS
= -100V
G
S
R
DS(on)
= 0.205Ω
I
D
= -13A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
TO-252AA
I-Pak
TO-251AA
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-13
-8.2
-52
66
0.53
± 20
194
-8.4
6.3
-5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
www.irf.com
1
12/13/04

IRFR5410PBF Related Products

IRFR5410PBF IRFU5410PBF IRFR5410TRLPBF
Description MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC MOSFET MOSFT PCh -100V 13A 205mOhm 38.7nC
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Other features HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 194 mJ 194 mJ 194 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (Abs) (ID) 13 A 13 A 13 A
Maximum drain current (ID) 13 A 13 A 13 A
Maximum drain-source on-resistance 0.205 Ω 0.205 Ω 0.205 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-251AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 66 W 66 W 66 W
Maximum pulsed drain current (IDM) 52 A 52 A 52 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Factory Lead Time - 15 weeks 15 weeks
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