A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD1106/ALD1116
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1106/ALD1116 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC, operating environment. The ALD1106/ALD1116
are building blocks for differential amplifier input stages, transmission
gates, and multiplexer applications, current sources and many precision
analog circuits.
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos 2mV typical
• High input impedance -- 10
14
Ω
typical
• Negative current (I
DS
) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 10
9
• Low input and output leakage currents
• RoHS compliant
ORDERING INFORMATION
(“L” suffix denotes lead-free (RoHS))
0°C to +70°C
8-Pin SOIC
Package
ALD1116SAL
14-Pin SOIC
Package
ALD1106SBL
Operating Temperature Range*
0°C to +70°C
-55°C to +125°C
8-Pin Plastic Dip
Package
ALD1116PAL
14-Pin Plastic Dip
Package
ALD1106PBL
8-Pin CERDIP
Package
ALD1116DA
14-Pin CERDIP
Package
ALD1106DB
APPLICATIONS
•
•
•
•
•
•
•
•
Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
PIN CONFIGURATION
ALD1116
DN1
GN1
SN1
V
-
1
2
3
4
TOP VIEW
SAL, PAL, DA PACKAGES
8
7
6
5
DN2
GN2
SN2
V
+
ALD1106
DN1
GN1
SN1
V
-
DN4
GN4
SN4
1
2
3
4
5
6
7
14
13
12
11
10
9
8
TOP VIEW
SBL, PBL, DB PACKAGES
DN2
GN2
SN2
V
+
DN3
GN3
SN3
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
ALD1106
V+ (11)
D
N1
(1)
D
N2
(14)
BLOCK DIAGRAM
ALD1116
V+ (5)
D
N3
(10)
D
N4
(5)
~
D
N1
(1)
~
D
N2
(8)
G
N1
(2)
G
N2
(13) G
N3
(9)
G
N4
(6)
G
N1
(2)
G
N2
(7)
S
N1
(3)
V- (4)
S
N2
(12)
S
N3
(8)
V- (4)
S
N4
(7)
S
N1
(3)
V- (4)
S
N2
(6)
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
SAL, PAL, SBL, PBL packages
DA, DB packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
ALD1106
Parameter
Gate Threshold
Voltage
Offset Voltage
V
GS1
-V
GS2
Gate Threshold
Temperature
Drift
2
On Drain
Current
Transconductance
ALD1116
Max
1.0
Min
0.4
Typ
0.7
Max
1.0
Unit
V
Test
Conditions
I
DS
= 1.0µA V
GS
= V
DS
Symbol
V
T
Min
0.4
Typ
0.7
V
OS
2
10
2
10
mV
I
DS
= 10µA V
GS
= V
DS
TC
VT
-1.2
-1.2
mV/°C
I
DS (ON)
3.0
4.8
3.0
4.8
mA
V
GS
= V
DS
= 5V
G
IS
∆G
fs
G
OS
1.0
1.8
0.5
200
1.0
1.8
0.5
200
mmho V
DS
= 5V I
DS
= 10mA
%
µmho
V
DS
= 5V I
DS
= 10mA
Mismatch
Output
Conductance
Drain Source
R
DS (ON)
On Resistance
Drain Source
On Resistence
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
1
Gate Leakage
Current
Input
Capacitance
2
Notes:
1
2
350
500
350
500
Ω
V
DS
= 0.1V V
GS
= 5V
∆
DS (ON)
0.5
0.5
%
V
DS
= 0.1V V
GS
= 5V
BV
DSS
12
12
V
I
DS
= 1.0µA V
GS
= 0V
I
DS (OFF)
10
400
4
10
1
3
10
400
4
10
1
3
pA
nA
pA
nA
pF
V
DS
=12V V
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
= 12V
T
A
= 125°C
I
GSS
C
ISS
0.1
0.1
1
1
Consists of junction leakage currents
Sample tested parameters
ALD1106/ALD1116
Advanced Linear Devices
2 of 11
TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N- CHANNEL CURRENT SOURCE
V+ = +5V
I
SET
I
SOURCE
R
SET
P- CHANNEL CURRENT SOURCE
V+ = +5V
ALD1102,
1/2 ALD1107,
or ALD1117
7
6
3
2
5
I
SOURCE
I
SET
R
SET
Q
4
8
Q
2
8
5
6
2
7
3
Q
1
1
ALD1101,
1/2 ALD1106,
or ALD1116
I
SOURCE
= I
SET
=
V+ - Vt
R
SET
~ V+ - 1.0 =
~
=
R
SET
4
R
SET
Q
3
Q
1,
Q
2
: N - Channel MOSFET
Q
3
, Q
4
: P - Channel MOSFET
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
2 x ALD1102
or ALD1107
I
SET
I
SOURCE
Q
4
R
SET
Q
1
Q
3
Q
2
Q
3
Q
4
Q
2
Q
1
I
SET
2 x ALD1101
or ALD1106
R
SET
I
SOURCE
I
SOURCE
= I
SET
=
V+ - 2Vt
R
SET
~
=
3
R
SET
Q
1
, Q
2
, Q
3
, Q
4
: N - Channel MOSFET
(ALD1101 or ALD1103)
Q1, Q2, Q3, Q4: P - Channel MOSFET
(ALD1102 or ALD1103)
ALD1106/ALD1116
Advanced Linear Devices
5 of 11
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