BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
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SOT−363
CASE 419B
STYLE 1
(3)
(2)
(1)
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
−
NPN
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
100
Unit
V
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
6
XX MG
G
V
CBO
V
1
XX = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
V
EBO
I
C
V
mAdc
MAXIMUM RATINGS
−
PNP
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
Value
−65
−45
−30
−80
−50
−30
−5.0
−100
Unit
V
ORDERING INFORMATION
Device
BC846BPDW1T1G,
SBC846BPDW1T1G
SBC846BPDW1T2G
V
BC847BPDW1T1G
SBC847BPDW1T1G
SBC847BPDW1T3G
BC847BPDW1T2G
BC848CPDW1T1G
BF
BF
BF
BF
BL
Mark Package
BB
BB
Shipping
†
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
10,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SOT−363
3,000 /
(Pb−Free) Tape & Reel
V
CBO
V
EBO
I
C
V
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BC846BPDW1T1/D
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 9
1
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
Max
380
250
3.0
328
−55
to +150
Unit
mW
mW/°C
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS (NPN)
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector
−Emitter
Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
Collector
−Base
Breakdown Voltage
(I
C
= 10
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
h
FE
−
−
200
420
V
CE(sat)
−
−
−
−
580
−
150
270
290
520
−
−
0.7
0.9
660
−
−
−
475
800
0.25
0.6
−
−
700
770
V
−
V
(BR)CEO
65
45
30
V
(BR)CES
80
50
30
V
(BR)CBO
80
50
30
V
(BR)EBO
6.0
6.0
5.0
I
CBO
−
−
−
−
−
−
−
−
−
−
15
5.0
nA
mA
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
V
BE(sat)
V
V
BE(on)
mV
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2
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP)
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA,
V
EB
= 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Emitter
−Base
Breakdown Voltage
(I
E
=
−1.0
mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
Collector Cutoff Current
(V
CB
=
−30
V)
(V
CB
=
−30
V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
mA,
V
CE
=
−5.0
V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
On Voltage
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−10
mA, V
CE
=
−5.0
V)
SMALL− SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mA, V
CE
=
−5.0
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
V, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mA, V
CE
=
−5.0
Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
ob
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
h
FE
−
−
200
420
V
CE(sat)
−
−
−
−
−0.6
−
150
270
290
520
−
−
−0.7
−0.9
−
−
−
−
475
800
−0.3
−0.65
−
−
−0.75
−0.82
V
−
V
(BR)CEO
−65
−45
−30
V
(BR)CES
−80
−50
−30
V
(BR)CBO
−80
−50
−30
V
(BR)EBO
−5.0
−5.0
−5.0
I
CBO
−
−
−
−
−
−
−
−
−
−
−15
−4.0
nA
mA
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
V
BE(sat)
V
V
BE(on)
V
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3
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS
−
BC846/SBC846
500
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
400
300
200
100
0
25°C
V
CE
= 5 V
0.30
I
C
/I
B
= 20
0.25
0.20
0.15
0.10
0.05
0
150°C
25°C
−55°C
0.0001
0.001
0.01
0.1
−55°C
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
150°C
−55°C
25°C
I
C
/I
B
= 20
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
T
A
= 25°C
1.6
20 mA
1.2
I
C
=
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
Figure 4. Base Emitter Voltage vs. Collector
Current
-1.4
-1.8
q
VB
for V
BE
-2.2
-55°C to 125°C
0.8
0.4
-2.6
0
-3.0
0.2
0.5
10 20
1.0 2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
Figure 5. Collector Saturation Region
Figure 6. Base−Emitter Temperature Coefficient
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4
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS
−
BC846/SBC846
40
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
10
6.0
4.0
C
ob
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
500
V
CE
= 5 V
T
A
= 25°C
200
100
50
20
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Capacitance
Figure 8. Current−Gain
−
Bandwidth Product
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