CMOS Low Voltage, 4 Ω Quad,
SPST Switches
ADG711/ADG712/ADG713
FEATURES
1.8 V to 5.5 V single supply
Low on resistance (2.5 Ω Typ)
Low on resistance flatness
−3 dB bandwidth > 200 MHz
Rail-to-rail operation
16-lead TSSOP and SOIC packages
Fast switching times: t
ON
=16 ns, t
OFF
=10 ns
Typical power consumption (< 0.01 μW)
TTL/CMOS compatible
Qualified for automotive applications
IN1
D1
S2
IN2
IN2
D2
S3
IN3
D3
S4
IN4
D4
IN4
D4
D3
S4
IN4
00042-001
FUNCTIONAL BLOCK DIAGRAM
S1
IN1
D1
S2
IN2
D2
S3
IN3
D3
S4
D4
S1
IN1
D1
S2
D2
S3
S1
ADG711
IN3
ADG712
ADG713
APPLICATIONS
USB 1.1 signal switching circuits
Cell phones
PDAs
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacement
SWITCHES SHOWN FOR A LOGIC “1” INPUT
Figure 1.
GENERAL DESCRIPTION
The
ADG711, ADG712,
and
ADG713
are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation yet gives high switching speed, low
on resistance, low leakage currents, and high bandwidth.
They are designed to operate from a single 1.8 V to 5.5 V supply,
making them ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices,
Inc. Fast switching times and high bandwidth make the parts
suitable for switching USB 1.1 data signals and video signals.
The
ADG711, ADG712,
and
ADG713
contain four independent
single-pole/single-throw (SPST) switches. The
ADG711
and
ADG712
differ only in that the digital control logic is inverted. The
ADG711
switches are turned on with a logic low on the appropriate
control input, while a logic high is required to turn on the switches
of the
ADG712.
The
ADG713
contains two switches whose digital
control logic is similar to the
ADG711,
while the logic is inverted
on the other two switches.
Each switch conducts equally well in both directions when On. The
ADG713
exhibits break-before-make switching action.
8.
The
ADG711/ADG712/ADG713
are available in 16-lead TSSOP
and 16-lead SOIC packages.
PRODUCT HIGHLIGHTS
1.
1.8 V to 5.5 V Single-Supply Operation.
The
ADG711, ADG712,
and
ADG713
offer high performance
and are fully specified and guaranteed with 3 V and 5 V
supply rails.
Very Low R
ON
(4.5 Ω maximum at 5 V, 8 Ω maximum at 3 V).
At supply voltage of 1.8 V, R
ON
is typically 35 Ω over the
temperature range.
Low On Resistance Flatness.
−3 dB Bandwidth >200 MHz.
Low Power Dissipation. CMOS construction ensures low
power dissipation.
Fast t
ON
/t
OFF
.
Break-Before-Make Switching.
This prevents channel shorting when the switches are
configured as a multiplexer (ADG713 only).
16-Lead TSSOP and 16-Lead SOIC Packages.
2.
3.
4.
5.
6.
7.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2004–2011 Analog Devices, Inc. All rights reserved.
ADG711/ADG712/ADG713
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions..............................6
Typical Performance Characteristics ..............................................7
Test Circuits........................................................................................9
Terminology .................................................................................... 11
Applications Information .............................................................. 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 14
Automotive Products ................................................................. 14
REVISION HISTORY
6/11—Rev. A to Rev. B
Updated Format..................................................................Universal
Changes to Features Section............................................................ 1
Changes to Absolute Maximum Ratings Table............................. 5
Changes to Ordering Guide .......................................................... 14
Added Automotive Products Section .......................................... 14
3/04—Rev. 0 to Rev. A
Added Applications .......................................................................... 1
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions ....................................................... 10
Rev. B | Page 2 of 16
ADG711/ADG712/ADG713
SPECIFICATIONS
V
DD
= +5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (ΔR
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off )
Drain Off Leakage I
D
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
1
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
(ADG713 Only)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth −3 dB
C
S
C
D
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
+25°C
−40°C to +85°C
0 V to V
DD
2.5
4
4.5
0.05
0.3
1.0
±0.01
±0.1
±0.01
±0.1
±0.01
±0.1
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
μA typ
μ max
V
IN
= V
INL
or V
INH
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= −10 mA;
See Figure 11
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
DD
= +5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
See Figure 12
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
See Figure 12
V
S
= V
D
= 1 V, or 4.5 V
See Figure 13
0.5
±0.2
±0.2
±0.2
2.4
0.8
0.005
±0.1
11
16
6
10
6
1
3
−58
−78
−90
200
10
10
22
0.001
1.0
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure 14
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V; see Figure 14
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 3 V; see Figure 15
V
S
= 2 V; R
S
= 0 Ω, C
L
= 1 nF; see Figure 16
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 17
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 18
R
L
= 50 Ω, C
L
= 5 pF; see Figure 19
V
DD
= +5.5 V
Digital inputs = 0 V or 5 V
1
Guaranteed by design, not subject to production test.
Rev. B | Page 3 of 16
ADG711/ADG712/ADG713
V
DD
= +3 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match Between
Channels (ΔR
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage I
S
(Off )
Drain Off Leakage I
D
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
(ADG713 Only)
Charge Injection
Off Isolation
1
+25°C
−40°C to +85°C
0 V to V
DD
5.5
8
0.3
2.5
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
μA typ
μ max
Test Conditions/Comments
5
0.1
V
S
= 0 V to V
DD
, I
S
= −10 mA;
See Figure 11
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
DD
= +3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V
See Figure 12
V
S
= 3 V/1 V, V
D
= 1 V/ 3 V
See Figure 12
V
S
= V
D
= 1 V, or 3 V
See Figure 13
±0.01
±0.1
±0.01
±0.1
±0.01
±0.1
±0.2
±0.2
±0.2
2.0
0.4
0.005
±0.1
13
20
7
12
7
1
3
−58
−78
−90
200
10
10
22
0.001
1.0
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V; see Figure 14
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V; see Figure 14
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 2 V; see Figure 15
V
S
= 1.5 V; R
S
= 0 Ω, C
L
= 1 nF; see Figure 16
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 17
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz; see Figure 18
R
L
= 50 Ω, C
L
= 5 pF; see Figure 19
Channel-to-Channel Crosstalk
Bandwidth −3 dB
C
S
C
D
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
V
DD
= +3.3 V
Digital inputs = 0 V or 3 V
1
Guaranteed by design, not subject to production test.
Rev. B | Page 4 of 16
ADG711/ADG712/ADG713
ABSOLUTE MAXIMUM RATINGS
T
A
= +25°C, unless otherwise noted.
Table 3.
Parameter
V
DD
to GND
Analog, Digital Inputs
1
Rating
−0.3 V to +6 V
−0.3 V to V
DD
+0.3 V or
30 mA, whichever occurs
first
30 mA
100 mA (Pulsed at 1 ms,
10% duty cycle maximum)
−40°C to +85°C
−65°C to +150°C
150°C
430 mW
150°C/W
27°C/W
520 mW
125°C/W
42°C/W
215°C
220°C
260(+0/−5)°C
20 sec to 40 sec
2 kV
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
Continuous Current, S or D
Peak Current, S or D
Operating Temperature Range
Storage Temperature Range
Junction Temperature
TSSOP Package, Power Dissipation
θ
JA
Thermal Impedance
θ
JC
Thermal Impedance
SOIC Package, Power Dissipation
θ
JA
Thermal Impedance
θ
JC
Thermal Impedance
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Soldering(Pb-Free)
Reflow, Peak Temperature
Time at Peak Temperature
ESD
1
ESD CAUTION
Overvoltages at IN, S or D will be clamped by internal diodes. Currents
should be limited to the maximum ratings given.
Rev. B | Page 5 of 16
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