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S29GL032N90TFI020

Description
NOR Flash 32M 3.0V 90ns Page-Mode Uni Sector
Categorystorage    storage   
File Size891KB,78 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S29GL032N90TFI020 Overview

NOR Flash 32M 3.0V 90ns Page-Mode Uni Sector

S29GL032N90TFI020 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTSSOP, TSSOP56,.8,20
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time90 ns
Spare memory width8
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G56
JESD-609 codee3
length18.4 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of departments/size64
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size8/16 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size64K
Maximum standby current0.000005 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width14 mm
Base Number Matches1
S29GL064N, S29GL032N
64 Mbit, 32 Mbit 3 V Page Mode
MirrorBit Flash
Distinctive Characteristics
Architectural Advantages
Single power supply operation
Manufactured on 110 nm MirrorBit process technology
Secured SiliconSector region
128-word/256-byte sector for permanent, secure identifica-
tion through an 8-word/16-byte random Electronic Serial
Number, accessible through a command sequence
Programmed and locked at the factory or by the customer
Flexible sector architecture
64Mb (uniform sector models): One hundred twenty-eight 32
Kword (64 KB) sectors
64 Mb (boot sector models): One hundred twenty-seven 32
Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors
32 Mb (uniform sector models): Sixty-four 32Kword (64 KB)
sectors
32 Mb (boot sector models): Sixty-three 32Kword (64 KB)
sectors + eight 4Kword (8KB) boot sectors
Enhanced VersatileI/O™ Control
All input levels (address, control, and DQ input levels) and
outputs are determined by voltage on V
IO
input. V
IO
range is
1.65 to V
CC
Compatibility with JEDEC standards
Provides pin out and software compatibility for single-power
supply flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Low power consumption
25 mA typical initial read current,
1 mA typical page read current
50 mA typical erase/program current
1 µA typical standby mode current
Package options
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA
48-ball fine-pitch BGA
Software and Hardware Features
Software features
Advanced Sector Protection: offers Persistent Sector Protec-
tion and Password Sector Protection
Program Suspend & Resume: read other sectors before pro-
gramming operation is completed
Erase Suspend & Resume: read/program other sectors be-
fore an erase operation is completed
Data# polling & toggle bits provide status
CFI (Common Flash Interface) compliant: allows host system
to identify and accommodate multiple flash devices
Unlock Bypass Program command reduces overall multi-
ple-word programming time
Hardware features
WP#/ACC input accelerates programming time (when high
voltage is applied) for greater throughput during system pro-
duction. Protects first or last sector regardless of sector pro-
tection settings on uniform sector models
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cy-
cle completion
Performance Characteristics
High performance
90 ns access time
8-word/16-byte page read buffer
25 ns page read time
16-word/32-byte write buffer which reduces overall program-
ming time for multiple-word updates
Cypress Semiconductor Corporation
Document Number: 001-98525 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 26, 2017
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