DMC4047LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q2
Q1
V
(BR)DSS
40V
-40V
R
DS(on) max
24mΩ @ V
GS
= 10V
32mΩ @ V
GS
= 4.5V
45mΩ @ V
GS
= -10V
55mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°C
6.9A
6.0A
-5.1A
-4.5A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
D2
S2
G2
S1
G1
D2
D2
D1
D1
D1
G2
S2
G1
S1
P-Channel MOSFET
Top View
TOP VIEW
Internal Schematic
N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC4047LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
C4047SD
YY WW
1
4
1
C4047SD
YY WW
4
= Manufacturer’s Marking
C4047SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
1 of 9
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DMC4047LSD
Document number: DS36206 Rev. 4 - 2
November 2013
© Diodes Incorporated
DMC4047LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
Repetitive Avalanche Energy (Notes 7) L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AR
E
AR
Value_Q2
40
±20
7.0
5.6
9.0
7.2
2.5
70
20
20
Value_Q1
-40
±20
-5.1
-4.1
-6.5
-5.2
-2.5
-40
20
20
Units
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 6) V
GS
= 10V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.3
0.8
98
59
1.8
1.1
71
43
11.8
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics N-Channel Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
40
1.4
Typ
15
20
0.7
1060
84
58
1.6
8.8
19.1
3.0
2.5
5.3
7.1
15.1
4.8
10.5
4.15
Max
1
100
2.4
24
32
1.0
nS
nC
I
F
= 8A, di/dt = 100A/μs
I
F
= 8A, di/dt = 100A/μs
nS
V
DD
= 25V, R
L
= 2.5Ω
V
GS
= 10V, R
G
= 3Ω
nC
V
DS
= 20V, I
D
= 8A
Ω
pF
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 0V, I
S
= 1.0A
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
DMC4047LSD
Document number: DS36206 Rev. 4 - 2
2 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMC4047LSD
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-40
-1.0
Typ
33
40
-0.7
1154
84
66
12.6
10.6
21.5
2.2
3.3
8.7
19.6
34.9
25.5
9.61
3.30
Max
-1
100
-2.2
45
55
-1.0
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
V
GS
= 0V, I
S
= -1.0A
pF
Ω
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
V
DS
= -20V, I
D
= -4.9A
nS
V
DS
= -20V, I
D
= -3.9A
V
GS
= -4.5V, R
G
= 1Ω
I
S
= -3.9A, dI/dt = 100A/μs
I
S
= -3.9A, dI/dt = 100A/μs
nS
nC
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMC4047LSD
Document number: DS36206 Rev. 4 - 2
3 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMC4047LSD
N-Channel Q2
20.0
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 3.5V
30
25
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
15.0
V
GS
= 4.5V
20
V
GS
= 150
°C
V
GS
= 85
°C
V
GS
= 4.0V
10.0
15
V
GS
= 25
°C
10
V
GS
= 125
°C
V
GS
= -55
°C
5.0
V
GS
= 3.0V
5
0.0
V
GS
= 2.5V
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure 1 Typical Output Characteristics
1
5
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
10
15
20
25
I
D
, DRAIN CURRENT(A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
5
30
T
A
= -55
°C
T
A
= 150
°C
T
A
= 125
°C
T
A
= 85
°C
V
GS
= 4.5V
T
A
= 25
°C
V
GS
= 10.0V
0
5
10
15
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= 10V
I
D
= 10A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50 -25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= 4.5V
I
D
= 5.0A
1.5
V
GS
= 4.5V
I
D
= 5.0A
1
0.5
V
GS
= 10V
I
D
= 10A
0
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMC4047LSD
Document number: DS36206 Rev. 4 - 2
4 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMC4047LSD
3
V
GS(TH)
, GATE THESHOLD VOLTAGE (V)
2.8
30
I
S
, SOURCE CURRENT (A)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Theshold Variation vs Ambient Temperature
1
-50
I
D
=250µA
I
D
=1mA
25
T
A
= 150°C
T
A
= 25°C
20
15
T
A
= 85°C
T
A
= -55°C
10
5
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
DMC4047LSD
Document number: DS36206 Rev. 4 - 2
5 of 9
www.diodes.com
November 2013
© Diodes Incorporated
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