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ZTX649STOB

Description
Bipolar Transistors - BJT NPN Super E-Line
CategoryDiscrete semiconductor    The transistor   
File Size79KB,3 Pages
ManufacturerDiodes Incorporated
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Bipolar Transistors - BJT NPN Super E-Line

ZTX649STOB Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instruction,
Contacts3
Reach Compliance Codecompliant
Base Number Matches1
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – APRIL 94
FEATURES
* 25 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
APPLICATIONS
* Motor driver
* DC-DC converters
ZTX649
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
35
25
5
6
2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
mW/ °C
°C
1
5.7
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
35
25
5
0.1
10
0.1
0.12
0.23
0.9
0.8
70
100
75
15
150
200
200
150
50
240
0.3
0.5
1.25
1
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=30V
V
CB
=30V,
T
amb
=100°C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
V
V
V
V
300
Transition Frequency
f
T
MHz
I
C
=100mA, V
CE
=5V
f=100MHz
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