DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF1820-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Mar 07
2003 Feb 10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
Typical 2-tone performance at a supply voltage of 26 V
and I
DQ
of 500 mA:
– Output power = 90 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim =
−26
dBc
•
Easy power control
•
Excellent ruggedness
•
High power gain
•
Excellent thermal stability
•
Designed for broadband operation (1800 to 2000 MHz)
•
Internally matched for ease of use.
APPLICATIONS
•
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
f
1
= 2000; f
2
= 2000.1
V
DS
(V)
26
P
L
(W)
90 (PEP)
G
p
(dB)
>11
Top view
2
handbook, halfpage
BLF1820-90
PINNING
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
1
3
MBK394
Fig.1 Simplified outline SOT502A.
η
D
(%)
>30
d
im
(dBc)
≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
PARAMETER
MIN.
−
−
−
−65
−
MAX.
65
±15
12
+150
200
UNIT
V
V
A
°C
°C
2003 Feb 10
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
Note
1. The value of capacitance is that of the die only.
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 2.1 mA
V
DS
= 10 V; I
D
= 210 mA
V
GS
= 0; V
DS
= 26 V
V
GS
=V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 7.5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz;
note 1
MIN.
65
4.4
−
27
−
−
−
−
PARAMETER
CONDITIONS
BLF1820-90
VALUE
0.81
UNIT
K/W
thermal resistance from junction to heatsink T
h
= 25
°C;
note 1
TYP.
−
−
−
−
−
6.2
0.1
5.1
MAX.
−
5.5
15
−
38
−
−
−
UNIT
V
V
µA
A
nA
S
Ω
pF
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th j-h
= 0.81 K/W; unless otherwise specified.
MODE OF OPERATION
Two-tone, class-AB
f
(MHz)
f
1
= 2000; f
2
= 2000.1
V
DS
(V)
26
I
DQ
(mA)
750
P
L
(W)
90 (PEP)
G
p
(dB)
>11
η
D
(%)
>30
d
im
(dBc)
≤−25
Ruggedness in class-AB operation
The BLF1820-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 26 V; I
DQ
= 750 mA; P
L
= 90 W; f = 2000 MHz (single tone).
15
handbook, halfpage
Gp
(dB)
Gp
MLD556
50
η
D
(%)
40
handbook, halfpage
0
MLD557
dim
(dBc)
−20
d3
d5
−40
η
D
30
10
20
−60
10
d7
5
0
40
80
0
120
PL (W) (PEP)
−80
0
40
80
120
PL (PEP) (W)
V
DS
= 26 V; I
DQ
= 750 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
V
DS
= 26 V; I
DQ
= 750 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.3
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
2003 Feb 10
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-90
15
handbook, halfpage
Gp
(dB)
(2)
(3)
MLD558
50
η
D
(%)
40
handbook, halfpage
0
MLD559
d3
(dBc)
−20
(1)
(1)
(1)
(2)
(3)
30
−40
20
−60
10
10
(2)
(3)
5
0
40
80
PL (W)
0
120
−80
0
40
80
120
PL (PEP) (W)
V
DS
= 26 V; I
DQ
= 750 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
(1) I
DQ
= 600 mA.
(2) I
DQ
= 750 mA.
(3) I
DQ
= 900 mA.
V
DS
= 26 V; I
DQ
= 750 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
(1) I
DQ
= 600 mA.
(2) I
DQ
= 750 mA.
(3) I
DQ
= 900 mA.
Fig.5
Fig.4
Power gain and drain efficiency as functions
of average load power; typical values.
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
handbook, halfpage
6
MLD560
handbook, halfpage
4
MLD561
Zi
(Ω)
4
ri
ZL
(Ω)
2
RL
2
xi
0
0
−2
XL
−4
1.6
−2
1.6
1.8
2
f (GHz)
2.2
1.8
2
f (GHz)
2.2
V
DS
= 26 V; I
DQ
= 750 mA; P
L
= 90 W; T
h
≤
25
°C.
V
DS
= 26 V; I
DQ
= 750 mA; P
L
= 90 W; T
h
≤
25
°C.
Fig.6
Input impedance as a function of frequency
(series components); typical values.
Fig.7
Load impedance as a function of frequency
(series components); typical values.
2003 Feb 10
5
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