BDX33/A/B/C
BDX33/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose
• Power Darlington TR
• Complement to BDX34/34A/34B/34C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
V
CEO
Collector-Emitter Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
45
60
80
100
45
60
80
100
10
15
0.25
70
150
- 65 ~ 150
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
I
C
I
CP
I
B
P
C
T
J
T
STG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX33/A/B/C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
* Collector-Emitter Sustaining Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
* Collector-Emitter Sustaining Voltage
: BDX33
: BDX33A
: BDX33B
: BDX33C
Collector Cut-off Current
: BDX33
: BDX33A
: BDX33B
: BDX33C
I
CEO
Collector Cut-off Current
: BDX33
: BDX33A
: BDX33B
: BDX33C
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: BDX33/34
: BDX33B/33C
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BDX33/33A
: BDX33B/33C
* Base-Emitter ON Voltage
: BDX33/33A
: BDX33B/33C
* Parallel Diode Forward Voltage
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 3A
I
C
= 4A, I
B
= 8mA
I
C
= 3A, I
B
= 6mA
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 3A
I
F
= 8A
750
750
2.5
2.5
2.5
2.5
4
V
V
V
V
V
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
0.5
0.5
0.5
0.5
5
mA
mA
mA
mA
mA
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
0.2
0.2
0.2
0.2
mA
mA
mA
mA
Test Condition
I
C
= 100mA I
B
= 0
Min.
45
60
80
100
45
60
80
100
45
60
80
100
Typ.
Max.
Units
V
V
V
V
V
V
V
V
V
V
V
V
V
CER
(sus)
I
C
= 100mA, I
B
= 0
R
BE
= 100Ω
V
CEV
(sus)
I
C
= 100mA, I
B
= 0
V
BE
= 1.5V
I
CBO
V
BE
(on)
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulse
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX33/A/B/C
Typical Characteristics
100k
10
10k
V
CE
(sat) [V], SATURATION VOLTAGE
V
CE
= 3 V
I
C
= 250 I
B
h
FE
, DC CURRENT GAIN
1
1k
100
0.1
1
10
0.1
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
10.0
1000
V
CE
= 3 V
f=1MHz
I
E
=0
I
C
[A], COLLECTOR CURRENT
5.0
C
ob
[pF], CAPACTIANCE
0
1
2
3
4
7.5
100
2.5
0.0
10
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
100
80
70
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (Pulsed)
10
5 ms 1 ms 100 us
10 us
P
D
[W], POWER DISSIPATION
60
50
I
C
MAX. (Continuous)
DC
40
30
1
20
BDX33
BDX33A
BDX33B
BDX33C
0.1
1
10
100
1000
10
0
0
25
50
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Tc [ C], CASE TEMPERATURE
o
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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No Identification Needed
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©2000 Fairchild Semiconductor International
Rev. E
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