ZXMP4A16G
Green
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(on) max
60mΩ @ V
GS
= -10V
100mΩ @ V
GS
= -4.5V
Features and Benefits
I
D
T
A
= +25°C
-6.4A
-5.0A
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
ADVANCED INFORMATION
-40V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
SOT223
D
G
S
Top View
Pin Out - Top
View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP4A16GTA
ZXMP4A16GTC
Notes:
Marking
ZXMP4A16
ZXMP4A16
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXMP
4A16
ZXMP4A16 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
YWW
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
1 of 7
www.diodes.com
February 2015
© Diodes Incorporated
ZXMP4A16G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
= -10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
Pulsed Source Current (Note 7)
Steady
State
T
A
= +25°C (Note 6)
T
A
= +70°C (Note 6)
T
A
= +25°C (Note 5)
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
SM
Value
-40
±20
-6.4
-5.1
-4.6
-5.2
-21
-21
Units
V
V
A
A
A
A
ADVANCE INFORMATION
ADVANCED INFORMATION
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T
A
= +25°C (Note 5)
T
A
= +25°C (Note 6)
Steady state (Note 5)
Steady state (Note 6)
Symbol
P
D
P
D
R
θJA
T
J,
T
STG
Value
2.0
16
3.9
31
62.5
32
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
g
fs
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-40
-1.0
Typ
-0.85
8.85
1,007
130
85
13.6
26.1
2.8
4.8
2.33
8.84
29.18
12.54
27.2
25.4
Max
-1.0
100
60
100
-1.2
nS
nC
I
F
= -3A, dI/dt = 100A/μs
nS
V
GS
= -10V, V
DD
= -20V, R
G
= 6.0Ω,
I
D
= -1.0A
nC
V
DS
= -20V, I
D
= -3.8A,
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Unit
V
µA
nA
V
mΩ
V
S
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3.8A
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= 0V, I
S
= -3.4A
V
DS
= -15V, I
D
= -3.8A
Static Drain-Source On-Resistance (Note 8)
Diode Forward Voltage (Note 8)
Forward Transconductance (Notes 8 & 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= -5.0V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t
10
secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width limited by maximum junction temperature.
8. Measured under pulsed conditions. Width≤300μs. Duty cycle ≤ 2%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
2 of 7
www.diodes.com
February 2015
© Diodes Incorporated
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