BSM 50 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 50 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
V
CE
I
C
Package
HALF-BRIDGE 1
Ordering Code
C67076-A2105-A70
1200V 78A
Symbol
V
CE
V
CGR
Values
1200
1200
Unit
V
V
GE
I
C
± 20
A
78
50
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
I
Cpuls
156
100
P
tot
400
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
+ 150
-40 ... + 125
≤
0.3
≤
0.6
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
W
1
Oct-21-1997
BSM 50 GB 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 2 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 50 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 50 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 50 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
0.25
-
C
oss
-
0.5
-
C
iss
-
3.3
-
g
fs
23
-
-
nF
S
I
GES
-
-
200
I
CES
-
-
0.8
3.5
1
-
nA
V
CE(sat)
-
-
2.5
3.1
3
3.7
mA
V
GE(th)
4.5
5.5
6.5
V
Values
typ.
max.
Unit
2
Oct-21-1997
BSM 50 GB 120 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 50 A
R
Gon
= 22
Ω
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 50 A
R
Gon
= 22
Ω
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 50 A
R
Goff
= 22
Ω
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 50 A
R
Goff
= 22
Ω
Free-Wheel Diode
Diode forward voltage
I
F
= 50 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 50 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 50 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -800 A/µs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 50 A,
V
GE
= 0 V
V
R
= -600 V,
di
F
/dt = -800 A/µs,
T
j
= 25 °C
V
R
- 600 V,
di
F
/dt - 800 A/µs,
T
j
= 125 °C
-
-
2.8
8
-
-
Q
rr
-
0.2
-
µC
t
rr
V
F
-
-
2.3
1.8
2.8
-
µs
V
-
70
100
t
f
-
380
500
t
d(off)
-
56
100
t
r
-
44
100
t
d(on)
ns
Values
typ.
max.
Unit
3
Oct-21-1997
BSM 50 GB 120 DN2
Power dissipation
P
tot
=
ƒ(T
C
)
parameter:
T
j
≤
150 °C
450
W
P
tot
350
300
Safe operating area
I
C
=
ƒ(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
3
A
t
= 14.0µs
p
I
C
10
2
100 µs
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
160
10
1
1 ms
10
0
10 ms
DC
10
-1
0
10
1
2
3
10
10
10
V
T
C
V
CE
Collector current
I
C
=
ƒ(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
90
A
I
C
70
60
50
40
30
20
10
0
0
Transient thermal impedance
Z
th JC
=
ƒ(t
p
)
parameter:
D = t
p
/
T
10
0
K/W
Z
thJC
10
-1
IGBT
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
single pulse
20
40
60
80
100
120
°C
160
10
-4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
T
C
t
p
4
Oct-21-1997
BSM 50 GB 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
100
A
I
C
80
70
60
50
40
30
20
10
0
0
1
2
3
V
V
CE
5
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
100
A
I
C
80
70
60
50
40
30
20
10
0
0
1
2
3
V
V
CE
5
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
100
A
I
C
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
V
14
V
GE
5
Oct-21-1997
京公网安备 11010802033920号
EEWORLD
