VS-19TQ015SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 19 A
FEATURES
Base
cathode
2
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
1
D
2
PAK
N/C
3
Anode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D
2
PAK
19 A
15 V
0.36 V
522 mA at 100 °C
125 °C
Single die
6.75 mJ
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015SPbF Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
19 A
pk
, T
J
= 75 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
19
15
700
0.32
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-19TQ015SPbF
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 80 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
VALUES
19
700
A
330
6.75
1.50
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 1.50 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 3 x V
R
typical
Revision: 10-Jun-16
Document Number: 94152
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-19TQ015SPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
19 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
38 A
19 A
38 A
T
J
= 100 °C, V
R
= 12 V
Maximum reverse leakage current
See fig. 2
I
RM (1)
T
J
= 100 °C, V
R
= 5 V
T
J
= 25 °C
T
J
= 100 °C
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
C
T
L
S
dV/dt
V
R
= Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 75 °C
VALUES
0.36
0.46
0.32
0.43
465
285
10.5
522
2000
8.0
10 000
pF
nH
V/μs
mA
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D
2
PAK
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +125
-55 to +150
1.50
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
19TQ015S
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (mA)
T
J
= 100 °C
100
T
J
= 75 °C
10
T
J
= 50 °C
T
J
= 25 °C
100
10
T
J
= 100 °C
T
J
= 75 °C
T
J
= 25 °C
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0
5
10
15
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Jun-16
Document Number: 94152
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-19TQ015SPbF
www.vishay.com
Vishay Semiconductors
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
5
10
15
20
25
30
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
.
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
105
10
Allowable Case Temperature (°C)
Average Power Loss (W)
100
19TQ015
R
thJC
(DC) = 1.50 °C/W
8
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
95
DC
90
6
4
85
2
DC
80
0
5
10
15
20
25
30
0
0
4
8
12
16
20
24
28
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 10-Jun-16
Document Number: 94152
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-19TQ015SPbF
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
1000
Vishay Semiconductors
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
19
2
T
3
Q
4
015
5
S
6
TRL PbF
7
8
Vishay Semiconductors product
Current rating (19 A)
Circuit configuration: T = TO-220
Schottky “Q” series
Voltage rating (015 = 15 V)
S = D
2
PAK
None = tube (50 pieces)
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
www.vishay.com/doc?96005
Revision: 10-Jun-16
Document Number: 94152
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D
2
PAK, TO-262
DIMENSIONS - D
2
PAK
in millimeters and inches
Conforms to JEDEC outline D
2
PAK (SMD-220)
(2)(3)
E
(3) L1
4
(D1) (3)
D
H
1
L2
B
B
A
2 x b2
2xb
0.010 M A M B
2x e
Gauge
plane
0° to 8°
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
L3
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
A1
B
Seating
plane
(b, b2)
Section B - B and C - C
Scale: None
(c)
c1 (4)
± 0.004 M B
H
C
c
E1
View A - A
Plating
(4)
b1, b3
Base
Metal
(3)
2.64 (0.103)
2.41 (0.096)
2.32
MIN.
(0.08)
2
3
(2)
Detail A
17.90 (0.70)
15.00 (0.625)
3.81
MIN.
(0.15)
9.65
MIN.
(0.38)
A
A
c2
A
(E)
B
Pad layout
11.00
MIN.
(0.43)
SYMBOL
A
A1
b
b1
b2
b3
c
c1
c2
D
MILLIMETERS
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
INCHES
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
NOTES
SYMBOL
D1
E
E1
MILLIMETERS
MIN.
6.86
9.65
7.90
14.61
1.78
-
1.27
4.78
MAX.
8.00
10.67
8.80
15.88
2.79
1.65
1.78
5.28
INCHES
MIN.
0.270
0.380
0.311
0.575
0.070
-
0.050
0.188
MAX.
0.315
0.420
0.346
0.625
0.110
0.066
0.070
0.208
NOTES
3
2, 3
3
4
4
4
2
(7)
e
H
L
L1
L2
L3
L4
2.54 BSC
0.100 BSC
3
0.25 BSC
0.010 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
Document Number: 95014
Revision: 31-Mar-09
Outline conforms to JEDEC outline TO-263AB
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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