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ES29DS640E-12RTG

Description
32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size594KB,59 Pages
ManufacturerEXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
Download Datasheet View All

ES29DS640E-12RTG Overview

32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

E S I
I
ES
Excel Semiconductor inc.
ES29LV320D
32Mbit(4M x 8/2M x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Single power supply operation
- 2.7V -3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector
• 20 Year data retention at 125
o
C
SOFTWARE FEATURES
• Sector Structure
- 8Kbyte x 8 boot sectors
- 64Kbyte x 63 sectors
- 256byte security sector
• Top or Bottom boot block
- ES29LV320DT for Top boot block device
- ES29LV320DB for Bottom boot block device
• A 256 bytes of extra sector for security code
- Factory lockable
- Customer lockable
• Package Options
- 48-pin TSOP
- Pb-free packages
- All Pb-free products are RoHS-Compliant
• Low Vcc write inhibit
• Manufactured on 0.18um process technology
• Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
Erase Suspend / Erase Resume
Data# poll and toggle for Program/erase status
CFI ( Common Flash Interface) supported
Unlock Bypass program
Autoselect mode
Auto-sleep mode after t
ACC
+ 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
• Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
• WP#/ACC input pin
- Two outermost boot sectors are protected when
WP# is set to low, regardless of sector protection
- Program speed is accelerated by raising WP#/ACC
to a high voltage (12V)
• Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
• Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
DEVICE PERFORMANCE
• Read access time
- 90ns/120n for normal Vcc range ( 2.7V - 3.6V )
- 80ns for regulated Vcc range ( 3.0V - 3.6V )
• Program and erase time
- Program time : 9us/byte, 11us/word ( typical )
- Accelerated program time : 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
• Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 10 mA active read current at 5 MHz
- 15mA active write current during program or erase
ES29LV320D
1
Rev. 2D Jan 5, 2006
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