MOSFET
MODULE
FEATURES
* Dual MOS FETs Cascaded Circuit
Dual 50A /500V
OUTLINE DRAWING
PDM505HA
Dimension(mm)
108.0
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
Circuit
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
MAXMUM RATINGS
Ratings
Drain-Source Voltage (V
GS
=0V)
Gate - Source Voltage
Continuous Drain Current
Duty=50%
D.C.
Approximate Weight : 220g
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
jw
T
stg
V
ISO
F
TOR
PDM505HA
500
+/ - 20
50 (Tc=25°C)
35 (Tc=25°C)
100 Tc=25°C)
350 Tc=25°C)
-40 to +150
-40 to +125
2000
3.0
2.0
Unit
V
V
A
A
W
°C
°C
V
N•m
Pulsed Drain Current
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminals to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Zero Gate Voltage Drain Current
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
I
DSS
V
GS(th)
I
GSS
r
DS(on)
V
DS(on)
g
fs
C
ies
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=V
DSS
,V
GS
=0V
T
j
=125°C, V
DS
=V
DSS
,V
GS
=0V
V
DS
=V
GS
, I
D
=3mA
V
GS
=+/- 20V,V
DS
=0V
V
GS
=10V, I
D
=25A
V
GS
=10V, I
D
=25A
V
DS
=15V, I
D
=25A
V
DS
=25V,V
GS
=0V,f=1MHz
V
DD
= 1/2V
DSS
I
D
=25A
V
GS
= -5V, +10V
R
G
= 5 ohm
Min.
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
3.1
-
110
3.2
30
8.4
1.1
0.24
92
110
250
68
Max.
1.0
4.0
4.0
0.3
120
3.4
-
-
-
-
-
-
-
-
Unit
mA
V
µA
m-ohm
V
S
nF
nF
nF
ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Characteristic
Symbol
Test Condition
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
I
S
I
SM
V
SD
t
rr
Q
r
D.C.
-
I
S
=50A
I
S
=50A, -dis/dt=100A/
µs
Min.
-
-
-
-
-
Typ.
-
-
-
80
0.18
Max.
35
100
1.5
-
-
Unit
A
A
V
ns
µC
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
R
th(j-c)
R
th(c-f)
Test Condition
MOS FET
Diode
Mounting surface flat, smooth, and greased
Min.
-
-
-
Typ.
-
-
-
Max.
0.36
2.0
0.1
Fig. 1 Typical Output Characteristics
T
C
=25℃ 250μs Pulse Test
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2
Vs. Gate-Source Voltage
Fig. 3 Typical Drain-Source On Voltage
Fig. 3
Vs. Junction Temperature
80
8
DRAIN TO SOURCE ON VOLTAGE V
DS
(on)(V)
T
C
=25℃ 250μs Pulse Test
16
DRAIN TO SOURCE ON VOLTAGE V
DS
(on)(V)
V
GS
=10V 250μs Pulse Test
V
GS
=10V
8V
I
D
=50A
I
D
=50A
DRAIN CURRENT I
D
(A)
60
6V
6
12
40
4
25A
15A
8
25A
20
5V
2
4
15A
0
0
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE V
DS
(V)
12
0
0
4
8
12
GATE TO SOURCE VOLTAGE V
GS
(V)
16
0
-40
0
40
80
120
JUNCTION TEMPERATURE T
j
(
)
℃
160
Fig. 4 Typical Capacitance
Fig. 4
Vs. Drain-Source Voltage
Fig. 5 Typical Gate Charge
Fig. 5
Vs. Gate-Source Voltage
V
GS
=0V f=1MHz
Fig. 6 Typical Switching Time
Fig. 6
Vs. Series Gate impedance
I
D
=35A
12
16
V
DD
=100V
250V
400V
5
I
D
=25A V
DD
=250V T
C
=25℃ 80μs Pulse Test
t
d
(off)
10
CAPACITANCE C (nF)
C
iss
GATE TO SOURCE VOLTAGE V
GS
(V)
2
SWITCHING TIME t (
μ
s)
12
t
r
t
d
(on)
t
f
8
1
6
8
0.5
4
0.2
4
2
C
oss
0.1
0
0.05
0
1
2
5
10
20
50
DRAIN TO SOURCE VOLTAGE V
DS
(V)
100
0
100
200
300
400
500
TOTAL GATE CHRAGE Q
g
(nC)
600
2
5
10
20
50
100
SERIES GATE IMPEDANCE R
G
(
Ω
)
200
Fig. 7 Typical Switching Time
Fig. 7
Vs. Drain Current
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8
Characteristics
Fig. 9 Typical Reverse Recovery Characteristics
I
S
=50A I
S
=25A T
j
=125℃
1000
R
G
=5Ω V
DD
=250V T
C
=25℃ 80μs Pulse Test
120
250μs Pulse Test
500
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE CURRENT I
R
(A)
500
SOURCE CURRENT I
S
(A)
SWITCHING TIME t (ns)
100
T
j
=125℃
200
t
rr
200
t
d
(off)
80
100
100
t
r
t
f
t
d
(on)
60
T
j
=25℃
50
50
40
20
I
R
20
10
20
10
1
2
5
10
20
DRAIN CURRENT I
D
(A)
50
100
0
0
0.3
0.6
0.9
1.2
1.5
SOURCE TO DRAIN VOLTAGE V
SD
(V)
2
1
0.5
0.2
0.1
0.05
0.02
1.8
5
0
100
200
300
400
-dis/dt (A/
μ
s)
500
600
200
100
50
DRAIN CURRENT I
D
(A)
T
C
=25℃ T
j
=150℃MAX Single Pulse
10μs
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
[r
th(j-c)
/ R
th(j-c)
]
Fig. 10 Maximum Safe Operating Area
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
100μs
20
10
5
2
1
0.5
0.2
DC
1ms
Operation in this area
is limited by R
DS
(on)
10ms
Per Unit Base
R
th(j-c)
=0.36℃/W
1 Shot Pulse
0.01
-5
10
10
-4
10
-3
10
-2
10
-1
PULSE DURATION t (s)
1
10
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
[r
th(j-c)
/ R
th(j-c)
]
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
-5
10
Per Unit Base
R
th(j-c)
=2.0℃/W
1 Shot Pulse
1
2
5
10 20
50 100 200 500 1000
DRAIN TO SOURCE VOLTAGE V
DS
(V)
10
-4
10
-3
10
-2
10
-1
PULSE DURATION t (s)
1
10
stm32/stm8
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