EN29LV640T/B
EN29LV640T/B
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μA
current in standby or automatic
sleep mode.
•
Standard DATA# polling and toggle bits
feature
•
Unlock Bypass Program command supported
•
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
•
Support JEDEC Common Flash Interface
(CFI).
•
Low Vcc write inhibit < 2.5V
•
Minimum 100K program/erase endurance
cycles.
•
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
•
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
•
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
•
Commercial and Industrial Temperature
Range.
•
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, One hundred and
twenty-seven 32K-Word / 64K-byte sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
•
-
-
-
High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 500ms typical
Chip erase time: 64s typical
•
JEDEC Standard compatible
GENERAL DESCRIPTION
The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The
EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
TABLE 1. PIN DESCRIPTION
LOGIC DIAGRAM
Pin Name
A0-A21
DQ0-DQ14
DQ15 / A-1
CE#
OE#
WE#
WP#/ACC
RESET#
BYTE#
RY/BY#
Vcc
Vss
NC
Function
22 Address inputs
15 Data Inputs/Outputs
DQ15 (data input/output, in word mode),
A-1 (LSB address input, in byte mode)
Chip Enable
Output Enable
Write Enable
Write Protect / Acceleration Pin
Hardware Reset Pin
Byte/Word mode selection
Ready/Busy Output
Supply Voltage
(2.7-3.6V)
Ground
Not Connected to anything
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16
EN29LV640T/B
ORDERING INFORMATION
T
―
EN29LV640
70
T
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 6mm x 8mm package
SPEED
70 = 70ns
90 = 90ns
BOOT CODE SECTOR ARCHITECTURE
T = Top boot Sector
B = Bottom boot Sector
BASE PART NUMBER
EN = EON Silicon Solution Inc.
29LV = FLASH, 3V Read, Program and Erase
640 = 64 Megabit (8M x 8 / 4M x 16)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16
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