EN29SL800
EN29SL800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Ideal for battery-powered applications.
•
Manufactured on 0.18 µm triple-metal double
poly triple-well CMOS Flash Technology
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2
µA
typical standby current
•
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
•
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
•
High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector and Chip Erase
•
Sector Unprotect Mode
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
Low Vcc write inhibit < 1.2V
•
Minimum 1,000K endurance cycle
•
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
•
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5µs. The
EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
1,000K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2005/06/15
EN29SL800
TABLE 1. PIN DESCRIPTION
Pin Name
A0-A18
DQ0-DQ14
DQ15 / A-1
CE#
OE#
RESET#
RY/BY#
WE#
Vcc
Vss
NC
BYTE#
Addresses
15 Data Inputs/Outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
Chip Enable
Function
FIGURE 1. LOGIC DIAGRAM
EN29SL800
A0 - A18
DQ0 – DQ15
(A-1)
Reset#
CE#
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Supply Voltage
(1.65-2.2V)
Ground
Not Connected to anything
Byte/Word Mode
OE#
WE#
Byte#
RY/BY#
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2005/06/15
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