EM639165TS-7G datasheet, PDF - EEWORLD Datasheet

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EM639165TS-7G: Description8M x 16 bit Synchronous DRAM (SDRAM); Categorystorage storage; File Size838KB，73 Pages; ManufacturerEtron; Websitehttp://www.etron.com/; Environmental Compliance

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EM639165TS-7G Overview

8M x 16 bit Synchronous DRAM (SDRAM)

EM639165TS-7G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Etron
package instruction	TSOP2,
Reach Compliance Code	compli
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G54
length	22.22 mm
memory density	134217728 bi
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm

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EtronTech

Features

•

Fast access time from clock: 5/5.4 ns

Fast clock rate: 166/143 MHz

Fully synchronous operation

Internal pipelined architecture

2M word x 16-bit x 4-bank

Programmable Mode registers

- CAS# Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

Auto Refresh and Self Refresh

4096 refresh cycles/64ms

CKE power down mode

Single +3.3V power supply

Interface: LVTTL

54-pin 400 mil plastic TSOP II package

Lead-free package is available

EM639165

(Rev 1.6, 02/2007)

8Mega x 16 Synchronous DRAM (SDRAM)

Pin Assignment (Top View)

V DD

DQ0

V D DQ

DQ1

DQ2

V S SQ

DQ3

DQ4

V D DQ

DQ5

DQ6

V S SQ

DQ7

V DD

DQM L

/W E

/CA S

/RA S

/CS

BA0

BA1

A 1 0 (A P )

V DD

V SS

DQ1 5

V S SQ

DQ1 4

DQ1 3

V D DQ

DQ1 2

DQ1 1

V S SQ

DQ1 0

DQ9

V D DQ

DQ8

V SS

DQM U

CL K

CK E

A11

V SS

•

Overview

The EM639165 SDRAM is a high-speed CMOS

synchronous DRAM containing 128 Mbits. It is internally

configured as 4 Banks of 2M word x 16 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal, CLK). Read and write

accesses to the SDRAM are burst oriented; accesses

start at a selected location and continue for a

programmed number of locations in a programmed

sequence. Accesses begin with the registration of a

BankActivate command which is then followed by a

Read or Write command.

The EM639165 provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function may

be enabled to provide a self-timed row precharge that is

initiated at the end of the burst sequence. The refresh

functions, either Auto or Self Refresh are easy to use.

By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well suited

for applications requiring high memory bandwidth and

particularly well suited to high performance PC

applications.

Key Specifications

EM639165

6/7

6/7 ns

5/5.4 ns

42/42 ns

60/63 ns

CK3

AC3

RAS

Clock Cycle time(min.)

Access time from CLK(max.)

Row Active time(min.)

Row Cycle time(min.)

Ordering Information

Part Number

EM639165TS-6G

EM639165TS-6LG

EM639165TS-7G

EM639165TS-7LG

“L” indicates Low Power.

“G” indicates Lead-free

Frequency Package

166MHz

143MHz

TSOP II

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

EM639165TS-7G Related Products

	EM639165TS-7G	EM639165_07	EM639165TS-6LG	EM639165TS-7LG
Description	8M x 16 bit Synchronous DRAM (SDRAM)	8M x 16 bit Synchronous DRAM (SDRAM)	8M x 16 bit Synchronous DRAM (SDRAM)	8M x 16 bit Synchronous DRAM (SDRAM)
Maker	Etron	-	Etron	Etron
Reach Compliance Code	compli	-	compli	compli

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