EtronTech
Features
•
Organized as 2M words by 16 bits
•
Fast Cycle Time : 60/65/70/85ns
•
Fast Page Cycle Time : 18/20/25/30ns
•
Page Read Operation by 8 words
•
Standby Current(ISB1): 100uA
•
Deep power-down Current : 10uA (Memory cell data
invalid)
•
Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
•
Compatible with low power SRAM
•
Single Power Supply Voltage : 3.0V±0.3V
•
Package Type : 48-ball FBGA, 6x8mm
EM567169BC
2M x 16 Pseudo SRAM
Rev 0.6 Apr. 2004
Pad Assignment
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
VSS
DQ11
A17
A7
DQ3
VCC
Ordering Information
Part Number
EM567169BC-60/65/70/85
E
VCC
DQ12
NC
A16
DQ4
VSS
Speed(ns)
60/65/70/85
F
DQ14
DQ13
A14
A15
DQ5
DQ6
Pin Description
Symbol
A0 – A20
DQ0 – DQ15
CE1#
CE2
OE#
WE#
LB#
UB#
V
CC
/V
CCQ
V
SS
/V
SSQ
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Standby Mode
Output Enable
Write Control
Lower Byte Control
Upper Byte Control
Power Supply
Ground
G
DQ15
A19
A12
A13
WE#
DQ7
H
A18
A8
A9
A10
A11
A20
Overview
The EM567169 is a 32M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced
CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration.
This device operates from a single power supply. Advanced circuit technology provides both high speed and
low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or
CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the device, and output
enable (OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte
access. This device is well suited to various microprocessor system applications where high speed, low power
and battery backup are required. And, with a guaranteed wide operating range, the EM567169 can be used in
environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Operating Mode
CE1# CE2 OE# WE# LB# UB# DQ0~DQ7 DQ8~DQ15
X
L
X
X
X
X
High-Z
H
H
X
X
X
X
High-Z
L
H
X
X
H
H
High-Z
L
H
H
H
L
X
High-Z
L
H
H
H
X
L
High-Z
L
H
L
H
L
H
D-out
L
H
L
H
H
L
High-Z
L
H
L
H
L
L
D-out
L
H
X
L
L
H
D-in
L
H
X
L
H
L
High-Z
L
H
X
L
L
L
D-in
Note:
X=don’t care. H=logic high. L=logic low.
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D-out
D-out
High-Z
D-in
D-in
Mode
Deselect
Deselect
Deselect
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
EM567169BC
Power
Deep Power Down
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Absolute Maximum Ratings
Supply voltage, V
CC
Input voltages, V
IN
1)
-0.2 to +3.6V
-0.2 to VCC + 0.3V
-2.0 to +3.6V*
100 mA
-25 to +85°C
-65 to +125°C
240°C
1W
Input and output voltages, V
IN
, V
OUT
Output short circuit current I
SH
Operating temperature, T
A
Storage temperature, T
STRG
Soldering Temperature (10s), T
SOLDER
Power dissipation, P
D
Note:
Absolute maximum DC requirements contains stress ratings only. Functional operation at the absolute
maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device
reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
V
IH
V
IL
Notes:
1. Overshoot: VCC + 2.0V in case of pulse width
≤
20ns
2. Undershoot: -2.0V in case of pulse width
≤
20ns
3. Overshoot and undershoot are sampled, not 100% tested.
Parameter
Power Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.2
2)
Typ.
3.0
−
−
−
Max.
3.3
0
V
CC
+0.2
+0.6
1)
Unit
V
V
V
V
4
Rev 0.6
Apr. 2004
EtronTech
DC Characteristics
Symbol
ILI
Parameter
Input Leakage
Current
Output Leakage
Current
Test Conditions
VIN = VSS to VCC
VIO = VSS to VCC
CE1# = VIH, CE2 = VIL or
OE# = VIH or WE# = VIL
Cycle time = Min., 100% duty, 70ns/85ns
Operating Current
I = 0mA, CE1# = VIL, CE2 =
@ Min Cycle Time IO
VIH, VIN = VIH or VIL
60ns/65ns
CE1# = VCC – 0.2V and
CE2 = VCC – 0.2V,
Other inputs = VSS ~ VCC
ISBD
VOL
VOH
Deep Power Down
(0Mb refresh)
Output Low
Voltage
Output High
Voltage
CE1#
≤
0.2V and CE2
≤
0.2V, Other inputs =
VSS ~ VCC
IOL = 2.1mA
IOH = -1.0mA
EM567169BC
Min.
-1
Max.
1
Unit
µA
ILO
-1
1
µA
35
−
45
mA
ICC1
ISB1
Standby Current
(CMOS)
−
100
µA
−
−
2.4
10
0.4
−
µA
V
V
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
COUT
Min
−
−
Typ
−
−
Max
8
10
Unit
pF
pF
Test Conditions
VIN = GND
VOUT = GND
Notes:
These parameters are sampled and not 100% tested.
5
Rev 0.6
Apr. 2004
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