R
EM MICROELECTRONIC
- MARIN SA
EM4100
Read Only Contactless Identification Device
Description
The EM4100 (previously named H4100) is a CMOS
integrated circuit for use in electronic Read Only RF
Transponders. The circuit is powered by an external coil
placed in an electromagnetic field, and gets its master
clock from the same field via one of the coil terminals. By
turning on and off the modulation current, the chip will send
back the 64 bits of information contained in a factor y pre-
programmed memory array.
The programming of the chip is performed by laser fusing
of polysilicon links in order to store a unique code on each
chip.
The EM4100 has several metal options which are used to
define the code type and data rate. Data rates of 64, 32
and 16 periods of carrier frequency per data bit are
available. Data can be coded as Manchester, Biphase or
PSK.
Due to low power consumption of the logic core, no supply
buffer capacitor is required. Only an external coil is needed
to obtain the chip function. A parallel resonance capacitor
of 74 pF is also integrated.
Features
□
□
□
□
□
□
□
□
□
□
64 bit memory array laser programmable
Several options of data rate and coding available
On chip resonance capacitor
On chip supply buffer capacitor
On chip voltage limiter
Full wave rectifier on chip
Large modulation depth due to a low impedance
modulation device
Operating frequency 100 - 150 kHz
Very small chip size convenient for implantation
Very low power consumption
Applications
□
□
□
□
Logistics automation
Anticounterfeiting
Access control
Industrial transponder
Typical Operating Configuration
Pin Assignment
Coil1
VSS
VDD
EM4100
EM4100
Coil2
L: typical 21.9mH for fo = 125kHz
COIL1
COIL2
Fig. 1
COIL2
COIL1
Coil terminal / Clock input
Coil terminal
Fig. 2
Copyright © 2004, EM Microelectronic-Marin SA
1
www.emmicroelectronic.com
R
EM4100
Absolute Maximum Ratings
Parameter
Maximum DC Current forced
on COIL1 & COIL2
Power Supply
Storage Temp. Die form
Storage Temp. PCB form
Electrostatic discharge
maximum to MIL-STD-883C
method 3015
Symbol
I
COIL
V
DD
T
store
T
store
V
ESD
Conditions
±30mA
-0.3 to 7.5V
-55 to +200°C
-55 to +125°C
1000V
*) The AC Voltage on Coil is limited by the on chip voltage
limitation circuitry. This is according to the parameter I
coil
in
the absolute maximum ratings.
Operating Conditions
Parameter
Operating Temp.
Maximum Coil
Current
AC Voltage on Coil
Supply Frequency
Symbol
T
op
I
COIL
V
coil
f
coil
3
100
14*
150
Min.
-40
Typ.
Max. Units
°C
+85
10
mA
Vpp
kHz
Stresses above these listed maximum ratings may cause
permanent damage to the device.
Exposure beyond specified operating conditions max affect
device reliability or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however due to the unique
properties of this device, anti-static precautions should be
taken as for any other CMOS component.
System Principle
Tranceiver
Transponder
Coil1
Oscillator
Antenna
Driver
EM4100
Coil2
Filter
and
Gain
Demodulator
Data decoder
Data received
from transponder
Signal on coils
Transponder coil
Transeiver coil
RF Carrier
Data
Fig. 3
Copyright © 2004, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
R
EM4100
Electrical Characteristics
V
DD
= 1.5V, V
SS
= 0V, f
C1
= 134kHz square wave, T
a
= 25°C
V
C1
= 1.0V with positive peak at V
DD
and negative peak at V
DD
-1V unless otherwise specified
Parameter
Supply Voltage
Rectified Supply Voltage
Coil1 - Coil2 Capacitance
Power Supply Capacitor
Biphase & Manchester
Versions
Supply Current
C2 pad Modulator ON
voltage drop
C1 pad Modulator ON
voltage drop
PSK Version
Supply Current PSK
C2 pad Modulator ON
voltage drop
Note 1)
Note 2)
Symbol Test Conditions
V
DD
V
DDREC
C
res
C
sup
I
DD
V
ONC2
V
ONC1
I
DDPSK
V
ONC2PSK
V
DD
=1.5V
I
VDDC2
=100µA with ref. to V
DD
V
DD
=1.5V
V
DD
=5.0V
V
DD
=5.0V
I
VDDC2
=100µA with ref. to V
DD
I
VDDC2
=1mA with ref. to V
DD
I
VDDC1
=1mA
with ref. to V
DD
V
COIL1
- V
COIL2
= 2.8 VDC
Modulator switch = “ON”
V
coil
=100mVRMS f=10kHz
Min.
1.5
1.5
Typ.
Max.
1)
Units
V
V
74
2)
120
0.63
0.9
2.1
2.1
1.1
2.3
2.3
1.5
1.3
2.8
2.8
pF
pF
µA
V
V
V
0.92
0.3
0.6
2
0.9
µA
V
The maximum voltage is defined by forcing 10mA on COIL1 - COIL2
The tolerance of the resonant capacitor is ± 15% over the whole production.
Optional reduced tolerance on request
On a wafer basis, the tolerance is ± 2%
Timing Characteristics
V
DD
= 1.5V, V
SS
= 0V, f
coil
= 134kHz square wave, T
a
= 25°C
V
C1
= 1.0V with positive peak at V
DD
and negative peak at V
DD
-1V unless otherwise specified
Timings are derived from the field frequency and are specified as a number of RF periods.
Parameter
Read Bit Period
Symbol
T
rdb
Test Conditions
depending on option
Value
64, 32, 16
Units
RF periods
Timing Waveforms
T
OC
COIL1
64, 32 or 16 T
OC
, depending on option
Serial Data Out
BIT n
BIT n+1
BIT n+2
Fig. 4
Copyright © 2004, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
R
EM4100
Block Diagram
CLOCK
EXTRACTOR
a
COIL1
VDD
AC1
Logic
Clock
Cres
+
FULL WAVE
RECTIFIER
AC2
-
Csup
SEQUENCER
MEMORY
ARRAY
COIL2
VSS
Serial
Data Out
DATA
MODULATOR
DATA
ENCODER
Modulation
Control
a: open only for PSK version
Fig. 5
Functional Description
General
The EM4100 is supplied by means of an electromagnetic
field induced on the attached coil. The AC voltage is
rectified in order to provide a DC internal supply voltage.
When the last bit is sent, the chip will continue with the first
bit until the power goes off.
Full Wave Rectifier
The AC input induced in the external coil by an incident
magnetic field is rectified by a Graetz bridge. The bridge
will limit the internal DC voltage to avoid malfunction in
strong fields.
Clock Extractor
One of the coil terminals (COIL1) is used to generate the
master clock for the logic function. The output of the clock
extractor drives a sequencer.
Sequencer
The sequencer provides all necessary signals to address
the memory array and to encode the serial data out.
Three mask programmed encoding versions of logic are
available. These three encoding types are Manchester,
biphase and PSK. The bit rate for the first and the second
type can be 64 or 32 periods of the field frequency. For the
PSK version, the bit rate is 16.
The sequencer receives its clock from the COIL1 clock
extractor and generates every internal signal controlling the
memory and the data encoder logic.
Data Modulator
The data modulator is controlled by the signal Modulation
Control in order to induce a high current in the coil. In the
PSK version, only COIL2 transistor drives this high current.
In the other versions, both coil1 and coil2 transistors drive it
to Vdd. This will affect the magnetic field according to the
data stored in the memory array.
Resonance Capacitor
This capacitor can be trimmed in factory by 0.5pf steps to
achieve the absolute value of 74pf typically. This option,
which is on request, allows a smaller capacitor tolerance on
the whole of the production.
Copyright © 2004, EM Microelectronic-Marin SA
4
www.emmicroelectronic.com
R
EM4100
Memory Array for Manchester & Bi-Phase encoding ICs
The EM4100 contains 64 bits divided in five groups of
information. 9 bits are used for the header, 10 row parity
bits (P0-P9), 4 column parity bits (PC0-PC3), 40 data bits
(D00-D93), and 1 stop bit set to logic 0.
Memory Array for PSK encoding ICs
The PSK coded IC's are programmed with odd parity for P0
and P1 and always with a logic zero.
The parity bits from P2 to P9 are even.
The column parity PC0 to PC3 are calculated including the
version bits and are even parity bits.
Code Description
Manchester
There is always a transition from ON to OFF or from OFF
to ON in the middle of bit period. At the transition from
logic bit “1” to logic bit “0” or logic bit “0” to logic bit “1” the
phase change. Value high of data stream presented below
modulator switch OFF, low represents switch ON
(see Fig. 6).
Biphase Code
At the beginning of each bit, a transition will occur. A logic
bit “1” will keep its state for the whole bit duration and a
logic bit “0” will show a transition in the middle of the bit
duration (see Fig. 7).
PSK Code
Modulation switch goes ON and OFF alternately every
period of carrier frequency. When a phase shift occurs, a
logical "0" is read from the memory. If no shift phase
occurs after a data rate cycle, a logical "1" is read
(see Fig. 8).
1
1
1
8 version bits or
customer ID
32 data bits
1
1
1
D00 D01
D10 D11
D20 D21
D30 D31
D40 D41
D50 D51
D60 D61
D70 D71
D80 D81
D90 D91
PC0 PC1
1
D02
D12
D22
D32
D42
D52
D62
D72
D82
D92
PC2
1
D03
D13
D23
D33
D43
D53
D63
D73
D83
D93
PC3
1
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
S0
9 header bits
10 line parity
bits
4 column parity bits
The header is composed of the 9 first bits which are all
mask programmed to "1". Due to the data and parity
organisation, this sequence cannot be reproduced in the
data string. The header is followed by 10 groups of 4 data
bits allowing 100 billion combinations and 1 even row parity
bit. Then, the last group consists of 4 event column parity
bits without row parity bit. S0 is a stop bit which is written to
"0"
Bits D00 to D03 and bits D10 to D13 are customer specific
identification.
These 64 bits are outputted serially in order to control the
modulator. When the 64 bits data string is outputted, the
output sequence is repeated continuously until power goes
off.
Manchester Code
Binary data
Memory output
Modulator control
Modulation control "low" means high current
Fig. 6
X
1
1
1
1
1
1
1
1
1
0
1
0
1
0
0
0
1
1
0
Biphase Code
Binary data
Memory output
0
1
1
0
1
0
0
1
Modulator control
Modulation control "low" means high current
Fig. 7
Copyright © 2004, EM Microelectronic-Marin SA
5
www.emmicroelectronic.com
京公网安备 11010802033920号
EEWORLD
