IGBT
MODULE
CIRCUIT
Single 300A 600V
OUTLINE DRAWING
PHMB300A6
Dimension(mm)
MAXMUM RATINGS
(Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Approximate Weight : 500g
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
F
TOR
M4
M6
PHMB300A6
600
+/ - 20
300
600
1040
-40 to +150
-40 to +125
2500
3
1.4
3
Unit
V
V
A
W
°C
°C
V
N•m
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=300A,V
GE
=15V
V
CE
=5V,I
C
=300mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 1 ohm
R
G
= 2 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
2.1
-
30,000
0.2
0.4
0.2
0.6
Max.
3.0
1.0
2.6
8.0
-
0.4
0.75
0.35
0.8
Unit
mA
µA
V
V
pF
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
I
F
I
FM
300
600
Unit
A
Typ.
1.9
0.15
Characteristic
Peak Forward Voltage
Reverse Recovery Time
Symbol
V
F
t
rr
Test Condition
I
F
=300A,V
GE
=0V
I
F
=300A,V
GE
=-10V,di/dt=300A/
µs
Min.
-
-
Max.
2.4
0.25
Unit
V
µs
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Symbol
R
th(j-c)
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.12
0.24
PHMB300A6
Fig.1- Output Characteristics
(Typical)
600
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
T
C
=25℃
16
T
C
=25℃
I
C
=150A
600A
V
GE
=20V
12V
500
Collector to Emitter Voltage V
CE
(V)
15V
10V
14
300A
12
10
8
6
4
2
0
Collector Current I
C
(A)
400
300
9V
200
100
8V
7V
0
0
2
4
6
8
10
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
400
350
300
250
200
16
T
C
=125℃
I
C
=150A
600A
Collector to Emitter Voltage V
CE
(V)
300A
12
10
8
6
4
2
0
Collector to Emitter Voltage V
CE
(V)
14
R
L
=1Ω
T
C
=25℃
14
Gate to Emitter Voltage V
GE
(V)
12
10
8
V
CE
=300V
150
100
50
0
0
150
300
450
600
750
900
1050
1200
6
200V
100V
4
2
0
1350
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Total Gate Charge Qg
(nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
200000
100000
Fig.6- Collector Current vs. Switching Time
(Typical)
1
0.9
0.8
Cies
50000
V
GE
=0V
f=1MH
Z
T
C
=25℃
Switching Time t
(μs)
Coes
Cres
V
CC
=300V
R
G
=2.0Ω
V
GE
=±15V
T
C
=25℃
Capacitance C
(pF)
20000
10000
5000
2000
1000
500
200
0.7
toff
0.6
0.5
ton
0.4
0.3
0.2
0.1
tf
tr
0.2
0.5
1
2
5
10
20
50
100
200
0
0
50
100
150
200
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
PHMB300A6
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
5
(Typical)
600
2
V
CC
=300V
I
C
=300A
V
G
=±15V
T
C
=25℃
T
C
=25℃
500
T
C
=125℃
Switching Time t
(μs)
Forward Current I
F
(A)
50
1
toff
ton
tr
400
0.5
300
tf
0.2
200
0.1
100
0.05
0.5
1
2
5
10
20
0
0
1
2
3
4
Series Gate Impedance R
G
(Ω)
Forward Voltage V
F
(V)
Fig.9- Reverse Recovery Characteristics
(Typical)
500
1000
Fig.10- Reverse Bias Safe Operating Area
(Typical)
500
200
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
I
F
=300A
T
C
=25℃
200
R
G
=2.0Ω
V
GE
=±15V
T
C
≦125℃
Collector Current I
C
(A)
800
1200
1600
2000
2400
trr
100
50
20
10
5
2
1
0.5
0.2
100
50
20
I
RrM
10
5
0
400
0.1
0
200
400
600
800
-di/dt
(A/μs)
Collector to Emitter Voltage V
CE
(V)
Fig.11- Transient Thermal Impedance
5x10
-1
FRD
(℃/W)
2x10
-1
1x10
-1
IGBT
Transient Thermal Impedance Rth
(J-C)
5x10
-2
2x10
-2
1x10
-2
5x10
-3
T
C
=25℃
2x10
-3
1x10
-3 -5
10
10
-4
10
-3
10
-2
10
-1
1 Shot Pulse
1
10
1
Time t
(s)
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