INTEGRATED CIRCUITS
DATA SHEET
UAA3592
Wideband code division multiple
access frequency division duplex
power amplifier
Objective specification
2002 Jul 02
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
FEATURES
•
3.6 V nominal supply voltage
•
24 dBm average output power
•
0 dBm input power
•
Wide operating temperature range from
−30
to +70
°C
•
HVQFN16 package.
APPLICATIONS
•
WCDMA-FDD applications.
QUICK REFERENCE DATA
T
amb
= 25
°C;
V
C1
= 3.6 V; V
reg
= 2.7 V.
SYMBOL
V
C1
P
o(max)
η
T
amb
positive supply voltage
maximum output power
efficiency at maximum power
ambient temperature
PARAMETER
MIN.
−
−
−
−30
TYP.
3.6
24.5
35
−
GENERAL DESCRIPTION
UAA3592
The UAA3592 is a Wideband Code Division Multiple
Access (WCDMA) silicon bipolar transistor Monolithic
Microwave Integrated Circuit (MMIC) Power Amplifier
(PA). The circuit is specially designed to operate at a
nominal 3.6 V battery supply voltage. It includes a current
saving architecture at low output power levels.
MAX.
−
−
−
+70
UNIT
V
dBm
%
°C
ORDERING INFORMATION
TYPE
NUMBER
UAA3592HN
PACKAGE
NAME
HVQFN16
DESCRIPTION
plastic, heatsink very thin quad flat package; no leads;
16 terminals; body 4
×
4
×
0.85 mm
VERSION
SOT629-1
2002 Jul 02
2
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
BLOCK DIAGRAM
UAA3592
VC1
6,7
FRX
8
UAA3592HN
RFI
3
10,11
RFO
Rext
16
BIAS
CONTROL
POWER
DETECTOR
ICTL
EN
2
1
(1)
GND
15
Vreg
4, 5
9, 12, 13
14
FCA234
n.c.
Vdetect
Die pad must be connected to ground.
Fig.1 Block diagram.
2002 Jul 02
3
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
PINNING
SYMBOL
EN
ICTL
RFI
n.c.
n.c.
V
C1
V
C1
F
RX
n.c.
RFO
RFO
n.c.
n.c.
V
detect
V
reg
R
ext
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
die pad
enable input
current control input
power amplifier input
not connected
not connected
supply voltage for the first stage collector
supply voltage for the first stage collector
RX filter
not connected
power amplifier output
power amplifier output
not connected
not connected
power detection
regulated supply voltage
connection to external resistor
ground
DESCRIPTION
UAA3592
6
5
7
n.c.
RFI
ICTL
EN
4
3
8
FRX
VC1
VC1
n.c.
9
n.c.
10 RFO
UAA3592HN
2
1
11 RFO
12 n.c.
Vdetect 14
Rext 16
Vreg 15
n.c. 13
FCA235
Fig.2 Pin configuration (bottom view).
2002 Jul 02
4
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
FUNCTIONAL DESCRIPTION
Operating conditions
UAA3592
The UAA3592 is designed to meet the
“Third Generation Partnership Project (3GPP) specification”
for the Universal
Mobile Telecommunication System (UMTS) standard.
Power amplifier
The device is intended for WCDMA power amplification. The control signals select the bias current as given in Table 1.
Table 1
Current control
ICTL
0
1
0
1
off
off
nominal bias current
bias current is reduced by 50% on the second stage
DESCRIPTION
EN
0
0
1
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
C1
V
reg
T
j(max)
P
tot
P
i
T
stg
Note
1. On Philips evaluation board.
HANDLING
Do not operate or store near strong electrostatic fields.
Mets class 1 ESD test requirements (Human Body Model - HBM), in accordance with
“EIA/JESD22-A114-A (October
1997)”
and class A ESD test requirements (Machine Model - MM), in accordance with
“EIA/JESD22-A115.-A (October
1997)”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. On Philips evaluation board.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
tbf
UNIT
K/W
PARAMETER
supply voltage for the first stage
collector
regulated voltage
maximum operating junction
temperature
total power dissipation
input power
storage temperature
note 1
CONDITIONS
−
−
−
−
−
−55
MIN.
MAX.
5.5
3.3
150
tbf
10
+150
V
V
°C
mW
dBm
°C
UNIT
2002 Jul 02
5
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