IGBT
MODULE
Chopper 75A 600V
CIRCUIT
PRHMB75A6
OUTLINE DRAWING
2- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS
(Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Approximate Weight : 220g
Symbol
V
CES
V
GES
I
C
I
C
P
C
T
j
T
stg
V
ISO
F
TOR
PRHMB75A6
600
+/ - 20
75
150
320
-40 to +150
-40 to +125
2500
2.04
Unit
V
V
A
W
°C
°C
V
N•m
Typ.
-
-
2.1
-
7500
0.15
0.25
0.2
0.45
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heat sink
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Time
Turn-on Time
Fall Time
Turn-off Time
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
C ies
½
r
½
on
½
f
½
off
Test Condition
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=75A,V
GE
=15V
V
CE
=5V,I
C
=75mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 4 ohm
R
G
= 10 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
−
−
−
−
Max.
1.0
1.0
2.6
8.0
-
0.3
0.4
0.35
0.7
Unit
mA
µA
V
V
pF
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
I
F
I
FM
75
150
Unit
A
Characteristic
Peak Forward Voltage
Reverse Recovery Time
Symbol
V
F
t
rr
I
F
=75A,V
GE
=0V
Test Condition
I
F
=75A,V
GE
=-10V,di/dt=75A/
µs
Min.
-
-
Typ.
1.9
0.15
Max.
2.4
0.25
Unit
V
µs
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Symbol
R
th(j-c)
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.38
0.80
IGBT
MODULE Chopper 75A 600V
Fig.1- Output Characteristics
(Typical)
T
C
=25℃
150
PRHMB75A6
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
16
T
C
=25℃
I
C
=30A
150A
V
GE
=20V
12V
15V
125
Collector to Emitter Voltage V
CE
(V)
14
10V
75A
12
10
8
6
4
2
0
Collector Current I
C
(A)
100
75
9V
50
25
8V
7V
0
0
2
4
6
8
10
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
400
350
300
250
200
16
T
C
=125℃
I
C
=30A
150A
Collector to Emitter Voltage V
CE
(V)
75A
12
10
8
6
4
2
0
Collector to Emitter Voltage V
CE
(V)
14
R
L
=4Ω
T
C
=25℃
14
Gate to Emitter Voltage V
GE
(V)
12
10
8
V
CE
=300V
150
6
200V
100
50
0
0
75
150
225
300
100V
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Total Gate Charge Qg
(nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
50000
20000
10000
Fig.6- Collector Current vs. Switching Time
(Typical)
1
0.9
0.8
Switching Time t
(μs)
Cies
Coes
Cres
V
GE
=0V
f=1MH
Z
T
C
=25℃
V
CC
=300V
R
G
=10Ω
V
GE
=±15V
T
C
=25℃
Capacitance C
(pF)
5000
2000
1000
500
200
100
50
0.2
0.5
1
2
5
10
20
50
100
200
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
toff
ton
tf
tr
80
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
IGBT
MODULE Chopper 75A 600V
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
5
PRHMB75A6
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
150
2
V
CC
=300V
I
C
=75A
V
G
=±15V
T
C
=25℃
T
C
=25℃
T
C
=125℃
toff
ton
125
Switching Time t
(μs)
Forward Current I
F
(A)
1
tr
100
0.5
75
tf
0.2
50
0.1
25
0.05
1
10
100
0
0
1
2
3
4
Series Gate Impedance R
G
(Ω)
Forward Voltage V
F
(V)
Fig.9- Reverse Recovery Characteristics
(Typical)
500
500
Fig.10- Reverse Bias Safe Operating Area
(Typical)
R
G
=10Ω
V
GE
=±15V
T
C
≦125℃
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
I
F
=75A
T
C
=25℃
200
200
100
100
Collector Current I
C
(A)
100
200
300
400
500
600
trr
50
20
10
5
2
1
0.5
0.2
50
20
10
I
RrM
5
0
0.1
0
200
400
600
800
-di/dt
(A/μs)
Collector to Emitter Voltage V
CE
(V)
Fig.11- Transient Thermal Impedance
1
(℃/W)
5x10
-1
2x10
-1
1x10
-1
5x10
-2
2x10
-2
1x10
-2
5x10
-3
FRD
IGBT
Transient Thermal Impedance Rth
(J-C)
T
C
=25℃
2x10
-3
1 Shot Pulse
10
-4
10
-3
10
-2
10
-1
1
10
1
1x10
-3 -5
10
Time t
(s)
Analog electronics
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