PT200S16 datasheet, PDF - EEWORLD Datasheet

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PT200S16: DescriptionDIODE MODULE 200A/1200V/1600V; CategoryDiscrete semiconductor diode; File Size122KB，3 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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PT200S16 Overview

DIODE MODULE 200A/1200V/1600V

PT200S16 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-XUFM-X5
Maximum non-repetitive peak forward current	1850 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum output current	200 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1600 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER

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DIODE MODULE

FEATURES

* Isolated Base

* 3 Phase Bridge Circuit

* Designed Power Circuit Board

* High Surge Capability

* UL Recognized, File No. E187184

200A/1200V/1600V

PT200S12 PT200S16

OUTLINE DRAWING

TYPICAL APPLICATIONS

* Rectified For General Use

Maximum Ratings

Parameter

Repetitive Peak Reverse Voltage *1

Non Repetitive Peak Reverse Voltage *1

Approx Net Weight:370g

Symbol

V

RRM

V

RSM

Type / Grade

PT200S12

1200

1300

PT200S16

1600

1750

Max Rated

Value

Unit

V

Parameter

Average Rectified Output Current

Surge Forward Current *1

I Squared t *1

Operating JunctionTemperature Range

Storage Temperature Range

Isoration Voltage

Case mounting

Mounting torque

Terminals

I

O(AV)

I

FSM

I

2

t

Tjw

Tstg

Viso

Ftor

Conditions

3-Phase Full Wave Rectified

Tc=Tt(Terminal)=72°C

50 Hz Half Sine Wave,1Pulse

Non-repetitive

2msec to 10msec

Unit

A

200

1850

170000

A

2

s

-40 to +150

°C

-40 to +125

°C

Base Plate to Terminals, AC1min

2500

V

Greased

M5 Screw

2.4 to 2.8

N

•

m

M5

2.4 to 2.8

Electrical

•

Thermal Characteristics

Characteristics

Peak Reverse Current *1

Peak Forward Voltage *1

Thermal Resistance

*1: Value Per 1Arm

Symbol

Test Conditions

Max. Unit

15

1.35

0.1

0.06

mA

V

°C/W

I

RM

V

RM

= V

RRM,

Tj= 150°C

V

FM

I

FM

= 200A, Tj=25°C

Rth(j-c) Junction to Case (Total)

Base Plate to Heat Sink with Thermal

Rth(c-f)

Compound (Total)

PT200S16 Related Products

	PT200S16	PT200S12
Description	DIODE MODULE 200A/1200V/1600V	DIODE MODULE 200A/1200V/1600V

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