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PT518

Description
3 PHASE, 50 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size133KB,3 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

PT518 Overview

3 PHASE, 50 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

PT518 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
package instructionR-XUFM-X5
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-XUFM-X5
Maximum non-repetitive peak forward current700 A
Number of components6
Phase3
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current50 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
DIODE MODULE
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* High Surge Capability
* UL Recognized, File No. E187184
50A/800V
PT518
OUTLINE DRAWING
ネ½゙
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Approx Net Weight:180g
Symbol
V
RRM
V
RSM
Type / Grade
PT518
800
900
Unit
V
Max Rated
Value
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
I
O(AV)
I
FSM
I
2
t
Tjw
Tstg
Viso
Ftor
Conditions
3-Phase Full Wave Rectified
Tc=116°C
50 Hz Half Sine Wave,1Pulse
Non-repetitive
2msec to 10msec
Unit
A
A
50
700
2450
A
2
s
-40 to +150
°C
-40 to +125
°C
Base Plate to Terminals, AC1min
2000
V
Greased
M5 Screw
2.4 to 2.8
N
m
M5
2.4 to 2.8
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
Max. Unit
10
1.15
0.27
0.06
mA
V
°C/W
I
RM
V
RM
= V
RRM,
Tj= 150°C
V
FM
I
FM
= 50A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Base Plate to Heat Sink with Thermal
Rth(c-f)
Compound (Total)
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