IGBT SP
series
CIRCUIT
Six-
Six-Pack 75A 1200V
OUTLINE DRAWING
PTMB75B12C
Dimension(mm)
Approximate Weight : 330g
MAXMUM RATINGS
(Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
F
TOR
PTMB75B12C
1200
+/ - 20
75
150
400
-40 to +150
-40 to +125
2500
2
-
Unit
V
V
A
W
°C
°C
V
N•m
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=1200V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=75A,V
GE
=15V
V
CE
=5V,I
C
=75mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 600V
R
L
= 8 ohm
R
G
= 13 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
1.9
-
6300
0.25
0.40
0.25
0.80
Max.
2.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.00
Unit
mA
µA
V
V
pF
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
I
F
I
FM
75
150
Unit
A
Typ.
1.9
0.2
Characteristic
Peak Forward Voltage
Reverse Recovery Time
Symbol
V
F
t
rr
Test Condition
I
F
=75A,V
GE
=0V
I
F
=75A,V
GE
=-10V,di/dt=150A/
µs
Min.
-
-
Max.
2.4
0.3
Unit
V
µs
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Symbol
R
th(j-c)
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.33
0.90
PTMB75B12C
Fig.1- Output Characteristics
(Typical)
150
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
T
C
=25℃
16
T
C
=25℃
I
C
=30A
150A
V
GE
=20V
15V
125
12V
10V
Collector to Emitter Voltage V
CE
(V)
14
12
10
8
6
4
2
0
75A
Collector Current I
C
(A)
100
9V
75
50
8V
25
7V
0
0
2
4
6
8
10
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
800
700
600
500
400
16
T
C
=125℃
I
C
=30A
150A
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
14
R
L
=8Ω
T
C
=25℃
14
Gate to Emitter Voltage V
GE
(V)
75A
12
10
8
6
4
2
0
12
10
8
V
CE
=600V
300
6
400V
200
100
0
0
100
200
300
400
500
600
200V
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Total Gate Charge Qg
(nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
50000
20000
10000
Fig.6- Collector Current vs. Switching Time
(Typical)
1.6
1.4
1.2
V
GE
=0V
f=1MH
Z
T
C
=25℃
Cies
V
CC
=600V
R
G
=13Ω
V
GE
=±15V
T
C
=25℃
Switching Time t
(μs)
Capacitance C
(pF)
5000
2000
1000
500
200
100
50
20
t
OFF
1
0.8
0.6
0.4
0.2
0
0
25
50
75
Coes
t
f
Cres
t
ON
t
r
0.1
0.2
0.5
1
2
5
10
20
50
100
200
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
PTMB75B12C
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
10
5
(Typical)
150
V
CC
=600V
I
C
=75A
V
GE
=±15V
T
C
=25℃
T
C
=25℃
T
C
=125℃
toff
125
Switching Time t
(μs)
Forward Current I
F
(A)
2
1
0.5
ton
tr
100
75
tf
0.2
0.1
0.05
50
25
0.02
5
10
20
50
100
200
0
0
1
2
3
4
Series Gate Impedance R
G
(Ω)
Forward Voltage V
F
(V)
Fig.9- Reverse Recovery Characteristics
(Typical)
500
500
Fig.10- Reverse Bias Safe Operating Area
(Typical)
R
G
=13Ω
V
GE
=±15V
T
C
≦125℃
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
I
F
=75A
T
C
=25℃
200
200
100
trr
50
Collector Current I
C
(A)
I
RrM
0
150
300
450
100
50
20
10
5
2
1
0.5
0.2
0.1
0
400
800
1200
1600
20
10
5
2
1
-di/dt
(A/μs)
Collector to Emitter Voltage V
CE
(V)
fig11-Tansient Thermal Impedance
5
Tansient Thermal Impedance Rth
(J-C)
(ﾟC/W)
2
1
5x10
2x10
-1
FRD
IGBT
-1
-1
1x10
5x10
2x10
1x10
5x10
2x10
-2
-2
-2
-3
Tc=25℃
1 Shot Pulse
-3
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
Time t
（s）
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