TENTATIVE
PIM
MODULE
15
KW 200V
PVD150-
PVD150-6
Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber
For 15kw 200V Inverter
MAXMUM RATINGS
(Tc=25°C)
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
3 Phase
Average Rectified Out –Put Current
Rectification
Surge Forward Current
Diode
I Squared t
Critical Rate of Fall of Forward Current
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Off-State Voltage
Average Rectified Out-Put Current
Surge Forward Current
I Squared t
Switch
Critical Rate Of Rise Of Turn-On Current
Thyristor
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Collector-Emitter Voltage
Gate-Emitter Voltage
DC
Collector Current
Inverter
1
ms
IGBT
DC
Forward Current
1
ms
Collector Power Dissipation
Collector-Emitter Voltage
Gate Emitter Voltage
Brake
DC
IGBT
Collector Current
1ms
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Snubber
Forward Current, DC
Diode
Surge Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage(Terminal to Base)
Isolation Resistance(Terminal to Base, @DC=500V)
Mounting Torque(Module Base to Heatsink)
Approximate Weight : 400g
Symbol
V
RRM
V
RSM
I
O(AV)
I
FSM
I
2
t
-di/dt
V
DRM
V
RSM
I
O(AV)
I
TSM
I
2
t
di/dt
P
GM
P
GM(AV)
I
GM
V
GM
V
RGM
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
I
F
I
FSM
Tjw
Tstg
Viso
Riso
Ftor
Rated Value
800
900
150
900
4050
160(@ :I
FM
=60A, V
R
=500V)
800
900
150
1000
5000
100
5
1
2
10
5
600
+/- 20V
150
300
150
300
520
600
+/- 20V
75
150
300
600
15
150
-40 to +150°C(notes:+125
°C
> Can not be biased.)
-40 to +125°C
2500(@AC, 1minute), 3000(@AC, 1second)
500
(M4), 1.4
Unit
V
A
A
2
s
A/
µs
V
A
A
2
s
A/µs
W
A
V
V
A
W
V
A
W
V
A
°C
V
M.ohm
N·m
ELECTRICAL CHARACTERISTICS
(Tc=25°C Unless otherwise noted)
Characteristic
Symbol
Test Condition
3 Phase
Peak Reverse Current *1
Rectification Diode Peak Reverse Voltage *1
Peak OFF-State Current
Peak Reverse Current
Peak On-State Voltage
Gate Current to Trigger
Switch Thyristor
Gate Voltage to Trigger
Gate Voltage to Non-Trigger
Critical Rate Of Rise Of Off-State Voltage
V
GT
V
GD
dv/dt
I
R
V
F
I
DM
I
RM
V
TM
I
GT
Tj=150°C, V
RM
=V
RRM
I
F
=150A
Tj=125°C, V
DM
=V
DRM
Tj=125°C, V
RM
=V
RRM
I
T
=150A
Tj=-40°C
V
D
=6V
Tj=25°C
I
T
=1A
Tj=125°C
Tj=-40°C
V
D
=6V
Tj=25°C
I
T
=1A
Tj=125°C
Tj=125°C, V
D
=2/3V
DRM
Min.
-
-
-
-
-
-
-
-
-
-
-
0.25
500
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
10
1.50
50
50
1.50
200
100
50
40
25
20
-
-
Unit
mA
µA
mA
V
mA
V
V
V/µs
TENTATIVE
Tj=125°C, V
D
=2/3V
DRM
V
RM
=100V, dv/dt=20V/µs
-di/dt=20A/µs
Tj=25°C, V
D
=2/3V
DRM
I
G
=200mA
-di
G
/dt=0.2A/µs
Turn-Off Time
Switch Thyristor
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Collector-Emitter Out-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-On Time
Switching Time
Fall Time
Turn-Off Time
Peak Forward Voltage
Reverse Recovery Time
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Peak Forward Voltage
Reverse Recovery Time
tq
tgt
td
tr
I
L
I
H
I
CES
I
GES
V
CE(sat)
V
CE(th)
Cies
tr
ton
tf
toff
V
F
trr
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
V
F
trr
-
-
-
-
-
-
-
-
-
4.0
-
-
-
-
-
-
-
-
-
-
4.0
-
-
-
-
-
-
-
100
6
2
4
100
80
-
-
2.1
-
15000
0.15
0.25
0.20
0.45
1.9
0.15
-
-
2.1
-
7500
0.15
0.25
0.20
0.45
-
-
-
-
-
-
-
-
2.0
0.5
2.6
8.0
-
0.30
0.40
0.35
0.7
2.4
0.25
1.0
0.5
2.6
8.0
-
0.3
0.4
0.35
0.7
2.5
0.3
µs
mA
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
V
pF
µs
V
µs
Inverter
IGBT
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=150A,V
GE
=15V
V
CE
=5V,I
C
=150mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 2 ohm
R
G
= 5.1 ohm
V
GE
= +/- 15V
I
F
=150A
I
F
=150A,V
GE
=-10V, d/dt=150A/µs
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=75A,V
GE
=15V
V
CE
=5V,I
C
=75mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 4 ohm
R
G
= 10 ohm
V
GE
= +/- 15V
I
F
=15A
I
F
=15A, di/dt=50A/µs
Brake
IGBT
Snubber
Diode
*1: per 1arm
ELECTRICAL CHARACTERISTICS
(Tc=25°C Unless otherwise noted)
Resistance
Thermister
B-Value
Thermal Time Constant
25°C
75°C
125°C
25°C/50°C
25°C/85°C
-
-
-
-
-
-
5.00
0.97
0.27
3375
3420
10
-
-
-
-
-
-
k. ohm
K
s
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
R
th(j-c)
Junction to Case
Test Condition
Per :1 arm.
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
0.50
0.30
0.24
0.55
0.42
Unit
°C/W
3 Phase Rectification Diode
Switch Thyristor
Inverter IGBT
Inverter Free Wheeling Diode
Brake IGBT
Embedded System
京公网安备 11010802033920号
EEWORLD
