TSN10A80 datasheet, PDF - EEWORLD Datasheet

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TSN10A80: DescriptionTHYRISTOR - 10A 800V TO-262; CategoryAnalog mixed-signal IC Trigger device; File Size50KB，2 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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TSN10A80 Overview

THYRISTOR - 10A 800V TO-262

TSN10A80 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
Shell connection	ANODE
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum DC gate trigger current	20 mA
Maximum DC gate trigger voltage	1 V
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
Maximum leakage current	0.1 mA
Number of components	1
Number of terminals	3
Maximum on-state current	500000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
Off-state repetitive peak voltage	800 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Trigger device type	SCR

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10A 800V TO-262

THYRISTOR

Type

：

TSN10A80

Cnstruction : Planner Structure Reverse Conducting

Futures : High V

DRM

& Permissonable di/dt

Application : Stater for HID Lump Bullust Circuit

weight

:

1.45g

Symbol

V

DRM

I

TRM

Conditions

Tj=25°C

Tc

≤

100

°C,

V

DM

≤

400V

I

G

≥

80mA, dig/dt

≥

0.5A/

µs

tw

≤

1.0µs，di/dt

≤

1500A/µs

duty

≤

0.005

℅

Tc

≤

100

°C,

tw

≤

1.0µs

duty

≤

0.005

℅

Tc

≤

100

°C,

V

DM

≤

400V

I

G

≥

80mA, dig/dt

≥

0.5A/

µs

I

TM

≤

500A,

tw

≤

1.0µs

50Hz, 1min., without CoolingFin

f

≥

50Hz, duty

≤

10

℅

Max. Rated Value

800

500

Unit

V

A

Absolute Maximum Ratings

Rating

Repetitive Peak off-state Voltage

Repetitive Peak On-State Current *

Repetitive Peak Forward Current *

Critical Rate of Rise of Off-State

Voltage

Permissible Rate of Down of

On-State Current *

PeakGate Power

Average Gate Power

PeakForward Gate Current

PeakForward Gate Voltage

PeakReverse Gate Voltage

Operating Junction Temperature Range

Storage Temperature Range

I

FRM

500

A

di/dt

1500

A/µs

P

GM

P

G(AV)

I

GM

V

GM

V

RGM

Tjw

Tstg

5

0.5

W

A

V

°C

f

≥

50Hz, duty

≤

10

℅

2

10

5

-40 to +125

-40 to +150

* notes : Test Circuit & Current Wave Form

R

SW

L

0.5

•I

TM

0.1

•I

TM

I

TM

V

DM

C

Thyristor Sample

t

tw

di/dt = 0.4

•

I

TM

/t

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