R.0.2P.991602-BEHRE
0809LD120
120 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The
0809LD120
is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QV
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P
d
)
Thermal Resistance (θ
JC
)
Voltage and Current
Drain-Source (V
DSS
)
Gate-Source (V
GS
)
Temperatures
Storage Temperature
Operating Junction Temperature
300 W
.6°C/W
65V
±20V
-65 to +200°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C PER SIDE
°
SYMBOL
ΒV
dss
I
dss
I
gss
V
gs(th)
V
ds(on)
g
FS
C
rss
C
oss
CHARACTERISTICS
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
TEST CONDITIONS
V
gs
= 0V, I
d
= 2ma
V
ds
= 28V, V
gs
= 0V
V
gs
= 20V, V
ds
= 0V
V
ds
= 10V, I
d
= 100ma
V
gs
= 10V, I
d
= 3A
V
ds
= 10V, I
d
= 3A
V
ds
= 28V, V
gs
= 0V, F = 1 MHz
V
ds
= 28V, V
gs
= 0V, F = 1 MHz
2
4
0.7
2.2
5
60
MIN
65
TYP
70
1
1
5
MAX
UNITS
V
A
A
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Reverse Transfer Capacitance
Output Capacitance
This part is input matched
.
V
V
S
pF
pF
FUNCTIONAL CHARACTERISTICS @ 25°C
°
G
PS
η
d
IMD
3
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion,
3
rd
Order
Load Mismatch
V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
V
ds
= 28V, I
dq
= 0.6A,
P
out
=
120W
PEP
, F
1
= 900 MHz,
F
2
= 900.1 MHz
V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
13
50
-30
dB
%
dBc
Ψ
5:1
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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