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0809LD60P

Description
60 WATT, 28V, 1 GHz LDMOS FET
File Size18KB,1 Pages
ManufacturerETC
Download Datasheet View All

0809LD60P Overview

60 WATT, 28V, 1 GHz LDMOS FET

R.0.2P.991602-BEHRE
0809LD60P
60 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The
0809LD60P
is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QU
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P
d
)
Thermal Resistance (θ
JC
)
Voltage and Current
Drain-Source (V
DSS
)
Gate-Source (V
GS
)
Temperatures
Storage Temperature
Operating Junction Temperature
170 W
1.0°C/W
65V
±20V
-65 to +200°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C
°
SYMBOL
ΒV
dss
I
dss
I
gss
V
gs(th)
V
ds(on)
g
FS
C
iss
C
rss
C
oss
CHARACTERISTICS
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TEST CONDITIONS
V
gs
= 0V, I
d
= 2ma
V
ds
= 28V, V
gs
= 0V
V
gs
= 20V, V
ds
= 0V
V
ds
= 10V, I
d
= 100ma
V
gs
= 10V, I
d
= 3A
V
ds
= 10V, I
d
= 3A
V
ds
= 28V, V
gs
= 0V, F = 1 MHz
V
ds
= 28V, V
gs
= 0V, F = 1 MHz
V
ds
= 28V, V
gs
= 0V, F = 1 MHz
2
4
0.7
2.2
90
5
60
MIN
65
TYP
70
1
1
5
MAX
UNITS
V

A

A
V
V
S
pF
pF
pF
FUNCTIONAL CHARACTERISTICS @ 25°C
°
G
PS
η
d
IMD
3
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion,
3
rd
Order
Load Mismatch
V
ds
= 28V, I
dq
= 0.3A,
F = 900MHz, P
out
= 60W
V
ds
= 28V, I
dq
= 0.3A,
F = 900MHz, P
out
= 60W
V
ds
= 28V, I
dq
= 0.3A,
P
out
=60W
PEP
, F
1
= 900 MHz,
F
2
= 900.1 MHz
V
ds
= 28V, I
dq
= 0.3A,
F = 900MHz, P
out
= 60W
14
50
-30
dB
%
dBc
Ψ
10:1
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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