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2SC4097

Description
Medium Power Transistor (32V, 0.5A)
CategoryDiscrete semiconductor    The transistor   
File Size59KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SC4097 Overview

Medium Power Transistor (32V, 0.5A)

2SC4097 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SC4097
Transistors
Medium Power Transistor (32V, 0.5A)
2SC4097
Features
1) High I
CMax
.
I
CMax
.
=
0.5A
2) Low V
CE(sat)
.
Optimal for low voltage operation.
3) Complements the 2SA1577.
External dimensions
(Units : mm)
2SC4097
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
1.25±0.1
2.1±0.1
0.9±0.1
0.2
0.7±0.1
0 ~ 0.1
0.1
0.4
Structure
Epitaxial planar type
NPN silicon transistor
(3)
0.3
+0.1
−0
All terminals have same dimensions
0.15±0.05
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : C∗
Denotes h
FE
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
P
C
must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
−55
to
+150
Unit
V
V
V
A
W
°C
°C
Rev.A
1/3

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