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SM3G48

Description
AC POWER CONTROL APPLICATIONS
CategoryAnalog mixed-signal IC    Trigger device   
File Size194KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SM3G48 Overview

AC POWER CONTROL APPLICATIONS

SM3G48 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value10 V/us
Maximum DC gate trigger current20 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current3 A
Maximum repetitive peak off-state leakage current20 µA
Off-state repetitive peak voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
SM3G48,USM3G48,SM3J48,USM3J48
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3G48,USM3G48,SM3J48,USM3J48
AC POWER CONTROL APPLICATIONS
l
Repetitive Peak Off-State Voltage
l
R.M.S On-State Current
l
Gate Trigger Current
: V
DRM
=400, 600V
: I
T (RMS)
=3A
: I
GT
=20mA Max.
Unit in mm
SM3G48, SM3J48
USM3G48, USM3J48
JEDEC
JEITA
TOSHIBA
13-10J1A
JEDEC
JEITA
TOSHIBA
13-10J2A
Weight : 1.7g
MARKING
NUMBER
*1
TYPE
SYMBOL
SM3G48, USM3G48
SM3J48, USM3J48
Example
*2
8A : January 1998
8B : Febrary 1998
8L : December 1998
MARK
M3G48
M3J48
1
2001-07-13

SM3G48 Related Products

SM3G48 SM3J48 USM3G48 USM3J48
Description AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS AC POWER CONTROL APPLICATIONS
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE
Critical rise rate of commutation voltage - minimum value 10 V/us 10 V/us 10 V/us 10 V/us
Maximum DC gate trigger current 20 mA 20 mA 20 mA 20 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V 1.5 V
Maximum holding current 30 mA 30 mA 30 mA 30 mA
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 3 3 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 3 A 3 A 3 A 3 A
Maximum repetitive peak off-state leakage current 20 µA 20 µA 20 µA 20 µA
Off-state repetitive peak voltage 400 V 600 V 400 V 600 V
surface mount NO NO YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type TRIAC TRIAC TRIAC TRIAC
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