SMAJ64Ae3/TR13 datasheet, PDF - EEWORLD Datasheet

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SMAJ64Ae3/TR13: DescriptionESD Suppressors / TVS Diodes Transient Voltage Suppressor; CategoryDiscrete semiconductor diode; File Size481KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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SMAJ64Ae3/TR13 Overview

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

SMAJ64Ae3/TR13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	DO-214AC
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	78.6 V
Minimum breakdown voltage	71.1 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	400 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	64 V
surface mount	YES
technology	AVALANCHE
Terminal surface	PURE MATTE TIN
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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SMAJ5.0e3 to SMAJ440CAe3

400W Transient Voltage Suppressor (TVS) protection device

Main product characteristics

BR(min)

- V

BR(max)

CL(MAX)

5.0V – 440V

6.40V – 543V

41.7A – 0.6A

9.6V – 713V

400W

RoHS

COMPLIANT

DO-214AC (SMA)

Description and applications

This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or

radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response

time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from

ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can

also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class

levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands

and special applications.

•

RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)

•

Qualified to automotive grade – AEC Q101

•

Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.

Maximum ratings and characteristics

(1)

Symbol

PPM

M(AV)

FSM

ΘJL

ΘJA

STG

(1)

(2)

(3)

(4)

(5)

Parameter

Peak power dissipation with a 10/1000µs waveform

(2)(3)

(fig.1)

Peak pulse current with a 10/1000µs waveform

(2)

(fig. 3)

Steady state power dissipation at T

= 75ºC, lead lengths 0.375”

(9.5mm)

(3)

Non repetitive peak forward surge current

(8.3ms single half sine wave) unidirectional only

(4)

Maximum instantaneous forward voltage at 25A for unidirectional

only

(5)

Typical thermal resistance junction to lead

Typical thermal resistance junction to ambient

Storage temperature

Junction temperature

Value

400

See next table

1.0

3.5 / 5.0

120

-55 to +150

Unit

ºC/W

ºC

All ratings at 25ºC unless specified otherwise

Non-repetitive current pulse, per Fig. 3 and derated above T

= 25ºC per Fig. 2. rating is 300W above 78V.

Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)

Mounted on minimum recommended pad layout

=3.5V for devices of V

< 220V and V

=5.0V maximum for devices of V

> 220V

2010

Mar Rev C

www.Microsemi.com

1/6

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