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DAN222M

Description
0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size168KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

DAN222M Overview

0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

DAN222M Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-F3
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
DAN222M
Diodes
Switching diode
DAN222M
Application
Ultra high speed switching
External dimensions
(Unit : mm)
1.2±0.1
0.32±0.05
(3)
0.13±0.05
Land size figure
(Unit : mm)
0.8
0.5
0.4
0.45
0.3±0.1
8.0±0.1
0.6±0.05
0
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
(1)
0.22±0.05
0.4
(2)
0.22±0.05
0.4
0.8±0.1
1.2±0.1
0½0.1
0.45
0.4
0.5±0.05
VMD3
Structure
Construction
Silicon epitaxial planar
ROHM : VMD3
dot (year week factory)
Taping specifications
(Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
1.75±0.07
1.35±0.05
 0
φ0.5±0.05
1.3±0.05
    0
(4.0±0.1)
2.0±0.05
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward voltage (Single)
Average rectified forward current (Single)
Surge current
(t=1us)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
Io
I
surge
Pd
Tj
Tstg
Limits
80
80
300
100
4
150
150
-55 to +150
Unit
V
V
mA
mA
A
mW
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
µA
pF
ns
Conditions
I
F
=100mA
V
R
=70V
V
R
=6V , f=1MHz
V
R
=6V , IF=5mA , RL=50Ω
Rev.B
0½0.1
5.5±0.2
3.5±0.05
1.15
1/2

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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