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DF3A5.6F(TE85L,F)

Description
ESD Suppressors / TVS Diodes ESD Zener 5.6V 65pF 3.0uA
CategoryDiscrete semiconductor    diode   
File Size163KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF3A5.6F(TE85L,F) Overview

ESD Suppressors / TVS Diodes ESD Zener 5.6V 65pF 3.0uA

DF3A5.6F(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeZENER DIODE
Maximum dynamic impedance40 Ω
Maximum operating temperature150 °C
Maximum power dissipation0.15 W
Nominal reference voltage5.6 V
surface mountYES
Maximum voltage tolerance5.4%
Working test current5 mA
Base Number Matches1
DF3A5.6F
TOSHIBA Diodes for Protecting against ESD
DF3A5.6F
Unit: mm
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only and
is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Abusolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
150
150
−55
to 150
Unit
mW
°C
°C
1. Cathode1
2. Cathode2
3. Anode
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TO-236MOD
JEDEC
temperature, etc.) may cause this product to decrease in the
SC-59
JEITA
reliability significantly even if the operating conditions (i.e. operating
1-3G1E
TOSHIBA
temperature/current/voltage, etc.) are within the absolute maximum
Weight : 12 mg (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
Test Condition
I
Z
= 5 mA
I
Z
= 5 mA
V
R
=2.5 V
V
R
= 0 V, f = 1 MHz
Min
5.3
Typ.
5.6
65
Max
6.0
40
1.0
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
Start of commercial production
2005-12
1
2014-03-01

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