IRF841FI datasheet, PDF - EEWORLD Datasheet

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IRF841FI: Description8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size337KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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IRF841FI Overview

8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF841FI Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	SFM
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
Other features	HIGH VOLTAGE, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	510 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (Abs) (ID)	4.5 A
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	110 pF
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	40 W
Maximum power dissipation(Abs)	40 W
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	125 ns
Maximum opening time (tons)	93 ns
Base Number Matches	1

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IRF841FI Related Products

	IRF841FI	IRF840FI	IRF841
Description	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it Rohs certified?	conform to	conform to	conform to
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics
Parts packaging code	SFM	SFM	SFM
package instruction	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
Contacts	3	3	3
Reach Compliance Code	not_compliant	not_compliant	not_compliant
Other features	HIGH VOLTAGE, FAST SWITCHING	HIGH VOLTAGE, FAST SWITCHING	HIGH VOLTAGE, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	510 mJ	510 mJ	510 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	450 V	500 V	450 V
Maximum drain current (Abs) (ID)	4.5 A	4.5 A	8 A
Maximum drain current (ID)	4.5 A	4.5 A	8 A
Maximum drain-source on-resistance	0.85 Ω	0.85 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	110 pF	110 pF	110 pF
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	40 W	40 W	125 W
Maximum power dissipation(Abs)	40 W	40 W	125 W
Maximum pulsed drain current (IDM)	32 A	32 A	32 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	125 ns	125 ns	125 ns
Maximum opening time (tons)	93 ns	93 ns	93 ns
Base Number Matches	1	1	1
Is it lead-free?	Lead free	-	Lead free
Shell connection	ISOLATED	ISOLATED	-

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