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PJ20C40CZ

Description
20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size87KB,3 Pages
ManufacturerETC
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PJ20C40CZ Overview

20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

PJ20C40
20 AMP SCHOTTKY BARRIER RECTIFIER
FEATURES
Metal of silicon rectifier, majority carrier conduction
Low power loss.high efficiency
High current capability, low V
f
High surge capacity
Guard ring for transient protection
High temperature soldering guaranteed:250℃/10
Seconds/0.375"(9.5mm) lead lengths at 5 lbs(2.3Kg)
tension
For use in low voltage , high frequency inverters, free
wheeling, and poparity protection applications.
TO-220
ORDERING INFORMATION
Device
PJ20C40CZ
Operating Temperature
-20℃½+85℃
Package
TO-220
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃ambient
temperature unless otherwise specified. Single phase, half wave 60Hz, resistive or inductive load. For
capacitive load, derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current See Fig.1
Peak Forward Surge Current, 8.3ms single half Sinewave
superimposed on rated load (JEDEC Method)
Maximum Instantanuous Forward Voltage Per Leg I
f
=10A,Tc=25
(Note 3)
Maximum Average Reverse Current at T
A
=25℃
Rated DC Blocking Voltage per Clement T
A
=100℃
Typical Thermal Resistance.(Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. Thermal Resistance Junction to CASE.
2. Measured at 1MHz and applied reverse voltage of 4.0 volts.
3. 300μs Pulse Width, Duty cycle 2%.
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
f
I
R
R
θ
JC
C
J
T
J
T
STG
PJ20C40
40
28
40
20
180
0.55
1
75
2
1100
-25 to +125
-65 to +150
Units
V
V
V
A
A
V
mA
℃/W
PF
1-3
2002/01.rev.A

PJ20C40CZ Related Products

PJ20C40CZ PJ20C40
Description 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

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