DSILC6-4xx
ESD Protection for high speed interface
Main applications
Where transient over-voltage protection in ESD
sensitive equipment is required, such as:
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■
■
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■
I/O3
VCC
I/O4
I/O2
GND
I/O1
Computers
Printers
Communication systems
Cell phone handsets and accessories
Video equipment
SOT-666
DSILC6-4P6
Flip-Chip
DSILC6-4F2
Functional diagram
Description
The
DSILC6-4xx
is a monolithic application
specific discrete dedicated to ESD protection of
high speed interfaces, such as USB 2.0, Ethernet,
display and camera serial interfaces
(LVDS).
I/O4
VCC
I/O3
I/O1
VCC
I/O2
I/O4
I/O1
GND
I/O2
GND
I/O3
The device is ideal for applications where both
reduced printed circuit board space and power
absorption capability are required.
SOT-666
Top-side view
Flip-Chip
Top-side view
Features
Diode array topology
■
■
■
■
■
I/O1
I/O4
VCC
GND
I/O2
I/O3
4 line protection
5 V V
CC
protection
Very low capacitance: 1 pF typ.
Lead-free pacakge
RoHS compliant
Flip-Chip
Top-side view
Order Code
Part Number
DSILC6-4P6
DSILC6-4F2
Marking
G
EI
Benefits
■
■
■
■
■
Very low capacitance between lines to GND for
optimized data integrity
Low PCB space consumption: 2.9 mm² max for
SOT-666 and 1.5 mm² max for Flip-Chip
Cut-off frequency > 2 GHz
High reliability offered by monolithic integration
MDDI, SMIA, MIPI specification compliant
Complies with the following standards:
IEC 61000-4-2 level 4:
8 kV (contact discharge)
15 kV (air discharge)
MIL STD 883G-Method 3015-7: class 3B
May 2007
Rev 3
1/11
www.st.com
11
Characteristics
DSILC6-4xx
1
Table 1.
Symbol
V
PP
I
PP
P
PP
T
stg
T
j
T
L
Characteristics
Absolute ratings
Parameter
Peak pulse voltage
Peak pulse current
Peak pulse power
Storage temperature range
Maximum junction temperature
Lead solder temperature (10 seconds duration)
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
SOT-666
Flip-Chip
I/O to GND
Pulse waveform = 8/20 µs SOT-666
Flip-Chip
Value
8
15
5
7
90
120
-55 to +150
125
260
Unit
kV
A
W
°C
°C
°C
Table 2.
Symbol
V
RM
I
RM
V
BR
V
F
V
CL
I
PP
Electrical characteristics (T
amb
= 25° C)
Parameter
Reverse stand-off voltage
Leakage current
Breakdown voltage
Forward voltage
Clamping voltage
Peak pulse current
Value
Symbol
I
RM
V
BR
V
F
Parameter
Leakage current
V
RM
= 5 V
6
1
SOT-666
Flip-Chip
SOT-666
Flip-Chip
SOT-666
Flip-Chip
SOT-666
Flip-Chip
2
2.5
1.5
1.8
1.0
1.25
0.75
0.9
2.5
3
1.8
2.0
1.25
1.5
0.9
1.20
0.06
0.05
pF
Test Conditions
Min
Typ
Max
0.5
µA
V
V
Unit
Breakdown voltage
I = 1 mA
between V
BUS
and GND
R
Forward voltage
I
F
= 10 mA
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
V
I/O
= 1.65 V, V
CC
= 4.3 V,
F = 1 MHz, V
OSC
= 400 mV
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
V
I/O
= 1.65 V, V
CC
= 4.3 V,
F = 1 MHz, V
OSC
= 400 mV
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
C
i/o-GND
Capacitance between
I/O and GND
C
i/o-i/o
Capacitance
between I/O
ΔC
i/o-GND
ΔC
i/o-i/o
2/11
DSILC6-4xx
Characteristics
Figure 1.
Relative variation of leakage
current versus junction
temperature - SOT-666 (typical
values)
Figure 2.
Relative variation of leakage
current versus junction
temperature Flip-Chip (typical
values)
I
RM
[T
j
] / I
RM
[T
j
=25°C]
100
V
R
= 5V
100
I
RM
[T
j
] / I
RM
[T
j
=25°C]
V
R
= 5V
10
10
T
j
(°C)
1
25
50
75
100
125
1
25
50
T
j
(°C)
75
100
125
Figure 3.
Remaining voltage after
Figure 4.
DSILC6-4P6 during ESD
15 kV positive surge (air discharge)
10 V/div
Remaining voltage after
DSILC6-4F2 during ESD
15 kV positive surge (air discharge)
10 V/div
50 ns/div
50 ns/div
Figure 5.
Remaining voltage after
Figure 6.
DSILC6-4P6 during ESD
15 kV negative surge (air discharge)
5 V/div
Remaining voltage after
DSILC6-4F2 during ESD
15 kV negative surge (air discharge)
5 V/div
50 ns/div
50 ns/div
3/11
Characteristics
DSILC6-4xx
Figure 7.
Frequency responses of all lines
DSILC6-4P6
S21(dB)
Figure 8.
Frequency response of all lines
DSILC6-4F2
S21 (dB)
0.00
0.00
- 5.00
- 5.00
- 10.00
- 10.00
- 15.00
- 15.00
- 20.00
F(Hz)
- 20.00
100.0k
- 25.00
F (Hz)
100.0M
Line 2
Line 4
1.0G
1.0M
3.0M
10.0M
30.0M
100.0M 300.0M
Line 2
Line 4
1.0G
3.0G
1.0M
Line 1
Line 3
10.0M
Line 1
Line 3
Figure 9.
Crosstalk results for lines
1/2 and 1/3 DSILC6-4P6
S21(dB)
Figure 10. Crosstalk results for lines
1/2 and 1/3 DSILC6-4F2
0.00
0.00
- 20.00
- 40.00
- 60.00
- 80.00
- 100.00
- 120.00
S21 (dB)
- 20.00
- 40.00
- 60.00
- 80.00
- 100.00
- 120.00
F(Hz)
- 140.00
100.0k
- 140.00
F (Hz)
1.0G
1.0M
Xtalk
3.0M
1/2
10.0M
30.0M
100.0M 300.0M
Xtalk
1/3
1.0G
3.0G
1.0M
Xtalk 1/2
10.0M
100.0M
Xtalk 1/3
4/11
Analog electronics
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