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TV30C7V0JB-G

Description
ESD Suppressors / TVS Diodes 3000W, 7V
CategoryDiscrete semiconductor    diode   
File Size122KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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ESD Suppressors / TVS Diodes 3000W, 7V

TV30C7V0JB-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
Reach Compliance Codecompliant
ECCN codeEAR99
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
SMD Transient Voltage Suppressor
TV30C5V0-G Thru. TV30C441-G
Working Peak Reverse Voltage: 5.0 to 440 Volts
Power Dissipation: 3000 Watts
RoHS Device
Features
- Glass passivated chip.
- 3000W peak pulse power capability with a 10/1000µs
waveform, repetitive rate (duty cycle):0.01%
- Low leakage.
- Uni and Bidirectional unit.
- Excellent clamping capability.
- Very fast response time.
- UL recognized file # E349157
-
Range:
TV30C5V0J(B) thru. TV30C171J(B)
R
SMC/DO-214AB
0.280(7.02)
0.260(6.52)
0.126(3.16)
0.114(2.86)
0.245(6.15)
0.220(5.52)
0.320(8.02)
0.305(7.64)
0.012(0.30)
0.006(0.15)
0.103(2.59)
0.079(1.98)
0.060(1.51)
0.030(0.75)
0.008(0.20)
0.000(0.00)
Mechanical Data
- Case: DO-214AB/SMC molded plastic.
- Epoxy: UL 94V-0 rate flame retardant
- Terminals: Solderable per MIL-STD-750, method 2026.
- Polarity: Color band denoted cathode
end except bipolar.
- Weight:
0.230 gram
(approx.)
Dimensions in inches and (millimeter)
Circuit Diagram
Bi-directional
Uni-directional
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Peak power dissipation with a 10/1000μs
waveform (Note 1)
Peak pulse current with a 10/1000μs
waveform (Note 1)
Power dissipation on infinite heatsink
at T
L
=75°C
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage
at 100A for unidirectional only (Note 3)
Operation junction and storage
temperature range
Symbol
P
PP
I
PP
P
D
I
FSM
V
F
T
J
, T
STG
Value
3000
See Next Table
6.0
300
3.5/5.0
-55 to +150
Units
W
A
W
A
V
°C
Notes: 1. Non-repetitive current pulse, per Fig.5 and derated above T
A
=25°C, per Fig.1
2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTV04
REV:H
Page 1
Comchip Technology CO., LTD.
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